Mechanisms of growth and defect properties of epitaxial SiC

Via, F. La; Camarda, Massimo; Magna, Antonino La

doi:10.1063/1.4890974

Cited by 105 publications

(66 citation statements)

References 189 publications

(357 reference statements)

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“…Interestingly, it has been shown that the inhomogeneity of the SBHs can be linked with the presence of defects of various origins, including both the materials and the devices [35]- [40]. In [41], defect clusters spatially located near the Schottky interface were responsible for the formation of partial lowbarrier patches.…”

mentioning

confidence: 99%

A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes

Arvanitopoulos

Antoniou

Jennings

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on Silicon (Si) substrates (3C-SiC-on-Si) have been found to suffer of excessive sub-threshold current, despite the superior electrical properties of 3C-SiC. In turn, that is one of the factors deterring the commercialization of this technology. The forward Current-Voltage (I-V) characteristics in these devices carry considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model is proposed and validated with measurements obtained from a fabricated and characterized Platinum/3C-SiCon-Si Schottky Barrier Diode with scope to shed light in the physical carrier transport mechanisms, the impact of traps and their characteristics on the actual device performance. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si, which allows the investigation of their impact on the magnification of the subthreshold current. Further, the simulation results and measured data allowed for the identification of additional distributions of interfacial states, the effect of which is linked to the observed nonuniformities of the Barrier Height value. A comprehensive characterization of the defects affecting the carrier transport mechanisms of the investigated 3C-SiC-on-Si power diode is thus achieved and the proposed TCAD model is able to accurately predict the device current both during forward and reverse bias conditions.

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mentioning

confidence: 99%

A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes

Arvanitopoulos

Antoniou

Jennings

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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“…The incorporation of dopants is not only controlled by the concentration of the dopant gases, but also by means of a site competition effect (i.e., by the Si/C ratio of the source precursors). This is because there is a preferential occupation of the carbon sites for donors and of the silicon sites for acceptors, respectively [ 5 ].…”

Section: Silicon Carbidementioning

confidence: 99%

SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications

Tudisco

Via

Agodi

et al. 2018

Sensors

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Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments at high beam luminosity. Silicon Carbide detectors for Intense Luminosity Investigations and Applications (SiCILIA) is a project starting as a collaboration between the Italian National Institute of Nuclear Physics (INFN) and IMM-CNR, aiming at the realization of innovative detection systems based on SiC. In this paper, we discuss the main features of silicon carbide as a material and its potential application in the field of particles and photons detectors, the project structure and the strategies used for the prototype realization, and the first results concerning prototype production and their performance.

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“…The crystal growth of group IV materials is a topic of extreme technological interest due to the importance of these materials for current and future technologies (including quantum technologies, see e.g., ref. ).…”

Section: Introductionmentioning

confidence: 99%

“…). In the case of compound semiconductors and in particular for SiC, the growth of a high‐quality material is particularly challenging due to the meta‐stability of different crystal symmetries (polytypes) in the usual growth conditions . The fundamentals on the growth kinetics are still not fully understood with accuracy and in general this lack of knowledge often results in a difficult process and material quality control in terms of defects and surface morphology.…”

Section: Introductionmentioning

confidence: 99%

Simulation of the Growth Kinetics in Group IV Compound Semiconductors

Magna

Alberti

Barbagiovanni

et al. 2018

Physica Status Solidi (a)

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A stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp3‐type bonding symmetry is presented. Formalization and implementation details are discussed for the particular case of the 3C‐SiC material. A key feature of this numerical tool is the ability to simulate the evolution of both point‐like and extended defects, whereas atom kinetics depend critically on process‐related parameters. In particular, the simulations can describe the surface state of the crystal and the generation/evolution of defects as a function of the initial substrate condition and the calibration of the simulation parameters. Quantitative predictions of the microstructural evolution of the studied systems can be readily compared with the structural characterization of actual processed samples is demonstrated.

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Mechanisms of growth and defect properties of epitaxial SiC

Cited by 105 publications

References 189 publications

A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes

A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes

SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications

Simulation of the Growth Kinetics in Group IV Compound Semiconductors

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