SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications

Tudisco, S.; Via, F. La; Agodi, C.; Altana, C.; Borghi, G.; Boscardin, M.; Bussolino, Giancarlo; Calcagno, L.; Camarda, Massimo; Cappuzzello, F.; Carbone, D.; Cascino, Salvatore; Casini, G.; Cavallaro, M.; Ciampi, C.; Cirrone, G.A.P.; Cuttone, G.; Fazzi, A.; Giove, D.; Gorini, G.; Labate, L.; Lanzalone, G.; Litrico, Grazia; Longo, Giuseppe; Presti, D. Lo; Mauceri, Marco; Modica, R.; Moschetti, Maurizio; Muoio, A.; Musumeci, F.; Pasquali, G.; Petringa, Giada; Piluso, Nicolò; Poggi, G.; Privitera, S.; Puglia, S. M. R.; Puglisi, Valeria; Rebaı̈, M.; Ronchin, S.; Santangelo, A.; Stefanini, A. A.; Trifiró, A.; Zimbone, Massimo

doi:10.3390/s18072289

Cited by 56 publications

(38 citation statements)

References 37 publications

(35 reference statements)

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“…Recently, larger SiC substrates (up to 8-in diameter wafers) and high-quality chemical vapordeposited epitaxial layers have been achieved. SiC is currently considered as one of the most attractive semiconductor materials for solid-state detectors in harsh radiation environments and high-temperature operations and, in particular, for alpha particle detection in plasma diagnostic systems for future nuclear fusion reactors [7]- [9].…”

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confidence: 99%

Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

Rafı́

Pellegrini

Godignon

et al. 2020

IEEE Trans. Nucl. Sci.

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Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide (SiC) devices for radiation monitoring in radiation harsh environments and with elevated temperatures and, especially, for the plasma diagnostic systems in future nuclear fusion reactors. In this work, four-quadrant p-n junction diodes produced on epitaxial 4H-SiC substrates are studied. The impact of electron, neutron, and proton irradiations (up to fluences of 1 × 10 16 electrons (e)/cm 2 , 2 × 10 15 neutrons (n)/cm 2 , and 2.5 × 10 15 protons (p)/cm 2 , respectively) on the electrical characteristics is studied by means of current-voltage (I-V) and capacitance-voltage (C-V) techniques. Regardless of the particle type and applied fluences, the results show similar low reverse currents for irradiated SiC devices, which are at least about four orders of magnitude lower than comparable Si devices. The effects of irradiation on interquadrant resistance and charge build-up in the interquadrant isolation are assessed. Furthermore, device performance as a radiation detector is investigated upon exposure to a collimated 239 Pu-241 Am-244 Cm trialpha source. The performance at room temperature is preserved even for the highest irradiation fluences, despite the fact that the rectification character in electrical characteristics is lost. From the results, advantages of using SiC devices in alpha particle detection in harsh environments can be envisaged.

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confidence: 99%

Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

Rafı́

Pellegrini

Godignon

et al. 2020

IEEE Trans. Nucl. Sci.

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“…Ions collectors allow to calculate the velocity distribution of charged particles escaped from the plasma. Recently has been implemented new solid state detectors base on Silicon Carbide material [10][11][12][13][14], which can be used as e plasma diagnostic and also as nuclear fragments detectors. Moreover, a Thomson Parabola Spectrometer (TPS) is employed to characterize ion beams.…”

Section: Visible Photons X-ray and Ionic Component Characterizationmentioning

confidence: 99%

LENS - Laser Energy for Nuclear Science facility @ LNS

et al. 2020

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“…With this aim the project promotes a major upgrade of the INFN-LNS research facility in the direction of a significant increase of the beam intensity, in view of a series of experimental campaigns at high beam intensities (some pµA) and integrated charge of hundreds of mC up to C, for the experiments in which γ-coincidence measurements are required. This in turn demands challenging R&D in several aspects of the technology involved in heavy-ion collision experiments [24,25,26,27]. Moreover, this project promotes and is strictly connected with a renewal of the INFN-LNS research infrastructure and with a specific R&D activity on detectors, materials and instrumentation.…”

Section: Numen Experimental Campaignmentioning

confidence: 99%

New experimental campaign of NUMEN project

2019

AIP Conference Proceedings

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The NUMEN main goal is the extraction from measured cross-sections of "data-driven" information on Nuclear Matrix Elements for all the systems candidate for 0νββ. The idea is to use as experimental tool Heavy Ions-Double Charge Exchange (HI-DCE) reactions. Crucial for the experimental challanges is the INFN Laboratori Nazionali del Sud (LNS) facility, made by the Superconducting Cyclotron (CS) and the MAGNEX magnetic spectrometer. The experimental measurements of HI-DCE reactions present a number of challenging aspects, since they are characterized by very low cross sections. Here it is reported the new experimental campaign of NUMEN Project.

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SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications

Cited by 56 publications

References 37 publications

Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

LENS - Laser Energy for Nuclear Science facility @ LNS

New experimental campaign of NUMEN project

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