Superlattices and Microstructures volume 40, issue 4-6, P388-392 2006 DOI: 10.1016/j.spmi.2006.06.015 View full text
M. Lazar, H. Vang, P. Brosselard, C. Raynaud, P. Cremillieu, J.-L. Leclercq, A. Descamps, S. Scharnholz, D. Planson

Abstract: SiC is currently an important topic in power devices. This new technology leads to lower power losses, faster switching, and higher working temperature. The design of SiC power devices requires the integration of edge termination techniques to obtain a high blocking voltage. The mesa structure approach is one wellestablished method. It could be used alone or in combination with a Junction Termination Extension (JTE). The mesa consists of a structure that removes material around the pn-junction. Due to the str…

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