This work offers the use of an active inductor and capacitor to build RF band-pass filter with 0.18μm and TSMC process. Based on the proposed structure, a prototype 1 GHz active filter designed and simulated in a 0.18μm CMOS technology. Simulation results for the designed RF band-pass filter show S21 > 19dB and consuming power less than 14 mW from 1.8 V supply voltage. The absolute values of reflection parameters (|S11| and |S22|) are about 60 dB. Low-bandwidth linear noise at output node are less than -170 dB and Advanced Design System (ADS) used to produce 1 GHz band-pass active filter simulation results.
The two-stage, fully differential audio amplifier with 0.18μm CMOS technology and TSMC process is proposed. Telescopic amplifier created stage one and common emitter structure used to provide high gain in stage two. The amplifier has a ±1.2V differential output swing and a gain greater than 127dB while consuming power less than 10mW from 1.8V supply voltage. The step response of the audio amplifier is about 0.04us and the gainbandwidth of the circuit is near 1.1GHz. Hspice software used to produce simulation results.
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