Articles you may be interested inElectronic structures of size-selected single-layered platinum clusters on silicon(111)-7 × 7 surface at a single cluster level by tunneling spectroscopy
By means of in situ high-temperature scanning tunnelling microscopy
(STM), the thermal stability of highly ordered artificial Al nanocluster
arrays, so-called two-dimensional nanocluster crystals, on vicinal
Si (111)-7 × 7
surfaces has been investigated. It was found that Al nanocluster crystals are stable below
500 °C.
Above 500 °C, the Al nanocluster crystal transforms into a surface phase with singular triangle shapes on down-terraces (the down-step side of a
terrace). However, on up-terraces (the up-step side of a terrace), Al nanoclusters can move on
Si (111)-7 × 7
surfaces over a large distance and the Al nanocluster crystal retracts toward the phase until the bare Si (111)-7 × 7
surface is completely recovered on up-terraces. The thermally
activated motion of Al nanoclusters was not observed apparently below
400 °C, though Al nanocluster crystals can be formed even at
200 °C. This indicates that it is atom diffusion, not cluster diffusion, which
is responsible for the formation process of metal cluster crystals on
Si (111)-7 × 7
surfaces.
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