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In this paper, we study the non-leptonic B c →J/ψV and B) weak decays in the framework of QCD factorization. In the evaluation, the form factors are calculated using the Bauer-Stech-Wirbel model and the light-front quark model, respectively. Besides the longitudinal amplitude, the power-suppressed transverse contributions are also evaluated at next-to-leading order. The predictions for the observables of B c →J/ψV and B V c c * h  decays are presented. We find that the NLO QCD contribution presents about 8% correction to the branching ratios, and the longitudinal polarization fractions of these decays are at the level of (80∼90)%. In addition, we suggest direct measurements on some useful ratios, R K 0 * r l= ( ) and R K 0 * r l=  ( ) , which are very suitable to test the consistence between theoretical prediction and data because their theoretical uncertainties can be well controlled.

BN–Fe–BN structure orientation in a uniform magnetic field and the thermal conductivity of the samples reached 3.59 W m−1 K−1.

Antiferroelectric PbZrO 3 has attracted renewed interest in recent years because of its unique properties and wide range of potential applications. However, the nature of antiferroelectricity and its evolution with the electric field and temperature remain controversial, mostly due to the difficulty of obtaining high-quality single-crystal samples. The lack of consensus regarding the phase transition in PbZrO 3 is not only important on a fundamental side but also greatly hinders further applications. Herein, high-quality PbZrO 3 epitaxial thin films are successfully fabricated by pulsed laser deposition. The structural and physical properties of the films are systematically studied via a combination of electric property measurements, X-ray diffraction, scanning transmission electron microscopy imaging, and second-harmonic generation studies. Our studies unveil the noncentrosymmetric nature of PbZrO 3 films at room temperature. Moreover, the Curie temperature increased to 270°, ∼40°higher than that in the bulk, and no intermediate ferroelectric phase was observed. Besides, an incipient ferroelectric with relaxor-like behavior above the Curie temperature due to the existence of a local polar cluster in the high-temperature paraelectric phase is experimentally observed for the first time. Our studies provide a better understanding of PbZrO 3 thin films and pave the way for practical applications of antiferroelectric material in modern electronic devices.