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In view of device scaling issues, embedded DRAM (eDRAM)\ud technology is being considered as a strong alternative to conventional\ud SRAM for use in on-chip memories. Memory cells designed using eDRAM\ud technology in addition to being logic-compatible, are variation tolerant\ud and immune to noise present at low supply voltages. However, two major\ud causes of concern are the data retention capability which is worsened by\ud parameter variations leading to frequent data refreshes (resulting in large\ud dynamic power overhead) and the transient reduction of stored charge\ud increasing soft-error (SE) susceptibility. In this paper, we present a novel\ud variation-tolerant 4T-DRAM cell whose power consumption is 20.4%\ud lower when compared to a similar sized eDRAM cell. The retention time\ud on-average is improved by 2.04X while incurring a delay overhead of\ud 3% on the read-access time. Most importantly, using a soft-error (SE)\ud rate analysis tool, we have confirmed that the cell sensitivity to SEs is\ud reduced by 56% on-average in a natural working environmentPeer ReviewedPostprint (published version

Embedded memories account for a large fraction of the overall silicon area and power consumption in modern SoC(s). While embedded memories are typically realized with SRAM, alternative solutions, such as embedded dynamic memories (eDRAM), can provide higher density and/or reduced power consumption. One major challenge that impedes the widespread adoption of eDRAM is that they require frequent refreshes potentially reducing the availability of the memory in periods of high activity and also consuming significant amount of power due to such frequent refreshes. Reducing the refresh rate while on one hand can reduce the power overhead, if not performed in a timely manner, can cause some cells to lose their content potentially resulting in memory errors. In this paper, we consider extending the refresh period of gain-cell based dynamic memories beyond the worst-case point of failure, assuming that the resulting errors can be tolerated when the use-cases are in the domain of inherently error-resilient applications. For example, we observe that for various data mining applications, a large number of memory failures can be accepted with tolerable imprecision in output quality. In particular, our results indicate that by allowing as many as 177 errors in a 16 kB memory, the maximum loss in output quality is 11%. We use this failure limit to study the impact of relaxing reliability constraints on memory availability and retention power for different technologies.

The heavily-threaded data processing demands of streaming multiprocessors (SM) in a GPGPU require a large register file (RF). The fast increasing size of the RF makes the area cost and power consumption unaffordable for traditional SRAM designs in the future technologies. In this paper, we propose to use embedded-DRAM (eDRAM) as an alternative in future GPGPUs. Compared with SRAM, eDRAM provides higher density and lower leakage power. However, the limited data retention time in eDRAM poses new challenges. Periodic refresh operations are needed to maintain data integrity. This is exacerbated with the scaling of eDRAM density, process variations and temperature. Unlike conventional CPUs which make use of multi-ported RF, most of the RFs in modern GPGPU are heavily banked but not multi-ported to reduce the hardware cost. This provides a unique opportunity to hide the refresh overhead. We propose two different eDRAM implementations based on 3T1D and 1T1C memory cells. To mitigate the impact of periodic refresh, we propose two novel refresh solutions using bank bubble and bank walk-through. Plus, for the 1T1C RF, we design an interleaved bank organization together with an intelligent warp scheduling strategy to reduce the impact of the destructive reads. The analysis shows that our schemes present better energy efficiency, scalability and variation tolerance than traditional SRAM-based designsPeer ReviewedPostprint (published version

Inherently error-resilient applications in areas such as signal processing, machine learning and data analytics provide opportunities for relaxing reliability requirements, and thereby reducing the overhead incurred by conventional error correction schemes. In this paper, we exploit the tolerable imprecision of such applications by designing an energyefficient fault-mitigation scheme for unreliable data memories to meet target yield. The proposed approach uses a bit-shuffling mechanism to isolate faults into bit locations with lower significance. This skews the bit-error distribution towards the low order bits, substantially limiting the output error magnitude. By controlling the granularity of the shuffling, the proposed technique enables trading-off quality for power, area, and timing overhead. Compared to errorcorrection codes, this can reduce the overhead by as much as 83% in read power, 77% in read access time, and 89% in area, when applied to various data mining applications in 28 nm process technology.

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With scaling of process technologies and worsening of process variations, embedded memories are susceptible to a large number of failure mechanisms making it hard to achieve high yield. In this paper, by bringing together architecture and circuit-level exploration tools, we analyse the impact of process variations on static random access memory (SRAM) cell stability and determine the impact of SRAM failures on memory functional yield. We then detail the importance of repair mechanisms such as error correcting codes (ECC) and redundancy on improving yield subject to constraints set on power and area. Finally, we show that a design paradigm orthogonal to traditional repair mechanisms involving redefinition of the yield criterion by accepting memories with failures is a promising candidate for improving yield without incurring additional overheads.

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