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Biologically inspired neuromorphic sensory memory systems based on memristor have received a lot of attention in the booming artificial intelligence industry due to significant potential to effectively process multi‐sensory signals from complex external environments. However, many memristors have significant switching parameters disperse, which is a great challenge for using memristors in bionic neuromorphic sensory memory systems. Herein, a stable ferroelectric memristor based on the Pd/BaTiO3:Eu2O3/La0.67Sr0.33MnO3 grown on Silicon structure with SrTiO3 as buffer layer is presented. The device possesses low coercive field voltage (−1.3–2.1 V) and robust endurance characteristic (~1010 cycles) through optimizing the growth temperature. More importantly, an ultra‐stable artificial multimodal sensory memory system with visual and tactile functions was reported for the first time by combining a pressure sensor, a photosensitive sensor, and a robotic arm. Utilizing the above system, the sensitivity value of the system is expressed by the conductance of the memristor to realize the gradual change of external stimulus, and multi signals inputs at the same time to this system have faithfully achieved sensory adaptation to multimodal sensors. This work paves the way for future development of memristor‐based perception systems in efficient multisensory neural robots.image

As a nanoscale semiconductor memory device, a ferroelectric memristor has promising prospects to break through the von Neumann framework in terms of artificial synaptic function, information processing, and integration. This study presents the fabrication of Li0.09Bi0.91FeO3 as the functional layer for a memristor device based on the Si substrate, enabling the integration of silicon complementary metal oxide semiconductor technology. In addition, it exhibits bipolar resistance switching characteristics in a direct current mode and can rapidly achieve stable conductance tunability at higher frequencies through the applied pulse for biosynapse simulation. More importantly, multiple devices are connected into electrical circuits to realize storage functions with information processing and programmable characteristics. This work paves the way for near-future applications of ferroelectric memristors in information processing.

In this work, a memristor device with Pd/HfO2:Gd/La0.67Sr0.33MnO3/SrTiO3/Si was prepared, and its synaptic behavior was investigated. The memristor shows excellent performance in I–V loops and ferroelectric properties. Through polarization, the conductance modulation of the memristor is achieved by the reversal of the ferroelectric domain. In addition, we simulate biological synapses and synaptic plasticities such as spike-timing-dependent plasticity, paired-pulse facilitation, and an excitatory postsynaptic current. These results lay the foundation for the development of synaptic functions in Hf-based ferroelectric thin films and will promote the development of synaptic applications for neuromorphic computing chips.

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