2022
DOI: 10.1063/5.0101026
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HfO2:Gd-based ferroelectric memristor as bio-synapse emulators

Abstract: In this work, a memristor device with Pd/HfO2:Gd/La0.67Sr0.33MnO3/SrTiO3/Si was prepared, and its synaptic behavior was investigated. The memristor shows excellent performance in I–V loops and ferroelectric properties. Through polarization, the conductance modulation of the memristor is achieved by the reversal of the ferroelectric domain. In addition, we simulate biological synapses and synaptic plasticities such as spike-timing-dependent plasticity, paired-pulse facilitation, and an excitatory postsynaptic c… Show more

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Cited by 5 publications
(2 citation statements)
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“…To benchmark the performance of these Ga 2 O 3 :Sn devices, the recognition accuracy under weak light intensity stimulations was compared with various photonic synapses made of photoelectronic phototransistors, [ 7,27‐29,33,40‐42 ] photosensors, [ 6,30‐32,43 ] and optoelectronic memristors. [ 4,34‐39,44 ,45] As shown in Figure 5h, our device had comparable high recognition accuracy to the highest value of accuracy and ultra‐low light intensity response to the lowest value of intensity. This result demonstrates the outstanding performance of our devices toward high‐efficient NVS, which could broaden the application potential of the NVS from bright to dim scenes.…”
Section: Resultsmentioning
confidence: 75%
“…To benchmark the performance of these Ga 2 O 3 :Sn devices, the recognition accuracy under weak light intensity stimulations was compared with various photonic synapses made of photoelectronic phototransistors, [ 7,27‐29,33,40‐42 ] photosensors, [ 6,30‐32,43 ] and optoelectronic memristors. [ 4,34‐39,44 ,45] As shown in Figure 5h, our device had comparable high recognition accuracy to the highest value of accuracy and ultra‐low light intensity response to the lowest value of intensity. This result demonstrates the outstanding performance of our devices toward high‐efficient NVS, which could broaden the application potential of the NVS from bright to dim scenes.…”
Section: Resultsmentioning
confidence: 75%
“…Over the last two decades, with the development of integrated circuit, HfO 2 is employed as the high-k dielectric layer in the electronic devices [3][4][5]. In addition, HfO 2 -based thin film with ferroelectric performance is discovered, further suggesting its potential in ferroelectric random-access memory (FeRAM) [6][7][8][9][10][11][12][13]. Generally, HfO 2 has three different crystal structures including monoclinic, tetragonal, and orthorhombic phases, in which the monoclinic and tetragonal phases are centrosymmetric structures, while the orthorhombic phase is non-centrosymmetric structure [14,15].…”
Section: Introductionmentioning
confidence: 99%