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This paper presents analysis of the fringing electric field effect on the threshold voltage of fully depleted (FD) silicon-on-insulator nMOS devices with the lightly doped drain (LDD)/sidewall oxide spacer structure based on a closed-form analytical model derived from the two-dimensional (2-D) Poisson's equation and using the conformal mapping technique. Based on the analytical model, as verified by the experimental data and the 2-D simulation results, with a lower n-LDD doping density, the fringing electric field effect in the sidewall oxide spacer lowers the short-channel effect.

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We can predict the rehospitalization rate of SSc patients by TAPSE and RVEF, suggesting the involvement of heart, skin, lung, and other organs in scleroderma patients.

The result infers that the systolic and diastolic function of LV declined, following pulmonary hypertension.

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In this paper, the design of a smart headband for epileptic seizure detection is presented. The proposed headband consists of four key components: 1) an analog front-end circuitry; 2) an epileptic seizure detection tag (ESDT); 3) a Bluetooth low-power chip; and 4) customized electrodes. All the above components are integrated into a fabric headband with only 50.3 g. The smart headband system dissipates 55.89 mW. The epileptic seizure detection algorithm inside ESDT is validated by using Boston Children’s Hospital’s CHB-MIT scalp EEG clinical database with the detection rate of 92.68% and the false alarm of 0.527/h. We develop a service APP connected to the cloud so that the patients’ health condition can be recorded and then referenced by doctors for further diagnosis or research.