Articles you may be interested inBulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electronmobility transistorsThe channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts J. Appl. Phys. 109, 056103 (2011); 10.1063/1.3554623 Carrier mobility degradation in metaloxidesemiconductor fieldeffect transistors due to oxide charge J. Appl. Phys. 74, 757 (1993); 10.1063/1.355249 Study of inversion layer mobility in metaloxidesemiconductor fieldeffect transistors with reoxidized nitrided oxides Appl.
The influence of N2O oxynitridation on hot-carrier-induced degradation of surface-channel p-channel metal oxide semiconductor field effect transistors was investigated. N2O oxynitridation reduces electron trapping due to the high barrier height for electron injection. N2O oxynitridation has little effect on electron and hole energies for interface trap creation. For drain avalanche hot electron injection, the role of a nitrogen-rich region as the diffusion barrier of hydrogen species is to reduce interface trap generation by chemical reaction between hydrogen atoms and Si3≡Si–H precursors at the Si/SiO2 interface. However, interface trap generation is enhanced by the existence of nitrogen atoms near the Si/SiO2 interface for channel hot hole injection. The enhancement of hole trapping may be due to a decrease in the compressive stress near the Si/SiO2 interface by nitrogen incorporation.
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