Synthesis, structural, magnetic, and cytotoxic properties of iron oxide coated iron/iron-carbide nanocomposite particles
The nanoscale coatings of Ce x Ru 1Àx O 2 (x 5 0, 0.25, 0.5, and 0.75 mol%) with electrochemical activity were investigated. The characterization of the resulting materials was conducted by Xray diffraction (XRD), scanning electron microscope (SEM), Brunauer-Emmett-Teller (BET), and cyclic voltammetry test (CV). It is shown through XRD analysis that there is no metallic ruthenium in those samples containing more than 50 mol% Ce. The results of SEM and BET show that the presence of CeO 2 changes the morphology as well as the surface areas of the coatings in electrodes. The electrochemical activity also shows a strong dependence on the CeO 2 content in the coatings under the CV test. The electrode of Ce 0.5 Ru 0.5 O 2 has the highest surface area (19.13 m 2 /g) and the best electrochemical property (voltammetric charge of 180.64 mC/cm 2 ) among the binary compositions.
The objective of this research was to develop novel polymer coated magnetic nanoparticles for controlled drug delivery applications. To form these novel nanoparticles, silane-coated magnetic nanoparticles (MNPs) were used as a template for a free radial polymerization of three monomers, N-isopropylacrylamide, acrylamide, and allylamine (NIPA-AAm-AH), on the surface of MNPs. Transmission electron microscope results indicated that the size of the NIPA-AAm-AH coated MNPs was approximately 100 nm. To investigate the chemical composition and chemical state of our nanoparticles, FTIR and XPS were used. Results from chemical analysis illustrated the presence of the constituent functional groups of the NIPA-AAm-AH coated MNPs. In addition, the magnetic properties of different layers on the MNPs, analyzed by SQUID, indicated a decrease in saturation magnetization after each layer of coating. The nanoparticles were successfully conjugated to fluorescent PEG to prolong their circulating half life. Furthermore, bovine serum albumin (BSA) was used in order to investigate the protein release profile of the nanoparticles as a function of the temperature. The protein release profile indicated that the NIPA-AAm-AH coated MNPs have a significantly higher percent release at 41 degrees C compared to those of 4 degrees C and 37 degrees C, which demonstrates their temperature sensitivity. In the future, the release profile of therapeutic drugs from nanoparticles at various temperatures and pHs as well as targeted capability of the synthesized nanoparticles for possible applications in controlled and targeted delivery will be investigated.
High-density Cu nanoparticles were spontaneously deposited on TaSiN diffusion barrier layers using organic solutions. These activated surfaces were then plated with Cu using electroless deposition. The organic deposition solution was composed of conventional solvent extractants that are very poor electrolytic conductors but can sustain short range spontaneous reactions. The process proceeds by an electrochemical displacement mechanism and effective Cu seed layers could be obtained at 35°C in 10 to 20 s. Additives consisting of low formula weight organics were used to enhance the Cu nanoparticle deposition. Other operating procedures, such as substrate etching, solution concentration, additives, agitation, and deposition time, were evaluated to determine their effects on particle density, morphology, and uniformity. The Cu-seeded TaSiN surfaces were then built up using a standard electroless Cu process. A continuous, pore free, smooth, and adherent Cu film was attained after 2 min of electroless deposition.Copper metallization is increasing in use on silicon integrated circuits because of low bulk resistivity, potentially higher resistance to electromigration and stress-induced voiding, and acceptability for subsequent deposition by electrochemical and chemical vapor deposition ͑CVD͒. 1,2 However, there are several problems associated with copper metallization, including poor adhesion to interlevel dielectrics and movement through the dielectric under field acceleration. 3-5 Moreover, Cu has a high rate of diffusion in silicon and silicides, and forms Cu-Si compounds at temperatures as low as 200°C, resulting in degradation of device characteristics. 6,7 Hence, an effective diffusion barrier between the copper conductive layer and the low dielectric constant interlayer is a prerequisite for Cu metallization.Various materials have been evaluated as diffusion barriers between the Cu metallization and the dielectric and Si substrate. Refractory metals are an attractive class of materials because of their high thermal stability and good electrical conductivity. However, the films are susceptible to failure either because the barrier and copper react to form a high resistivity intermetallic or copper interacts with the substrate after diffusing through barriers via grain boundaries. Ternary amorphous metallic thin films consisting of a transition metal, a nonmetal ͑Si or B͒ component and nitrogen have been extensively explored as potential candidates. 8-10 Amorphous Ta-Si-N is one of the effective barrier materials because it does not react with copper, lacks fast diffusion paths, and has a high crystallization temperature. 11,12 Copper can be deposited on the barrier layers by physical vapor deposition ͑PVD͒, chemical vapor deposition ͑CVD͒, and electrolytic or electroless deposition. Among these techniques, electroless deposition is attractive in the microelectronics and semiconductor industries due to high selectivity, excellent throwing power, good trench-filling capability, and because no electrical contacts need ...
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