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Dielectric Ba0.6Sr0.4TiO3 thin films were epitaxially grown on (001) MgO by using pulsed laser ablation. Microstructure studies from x-ray diffraction and electron microscopy suggest that the as-grown films are c-axis oriented with an interface relationship of 〈100〉BSTO//〈100〉MgO. A room temperature coupled microwave phase shifter has been developed with a phase shift near 250° at 23.675 GHz under an electrical field of 40 V/μm and a figure of merit of ∼53°/dB. The performance of the microwave phase shifter based on the epitaxial Ba0.6Sr0.4TiO3 thin films on (001) MgO is close to that needed for practical applications in wireless communications.

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Ferroelectric Ba0.6Sr0.4TiO3 thin films with 2% Mn additional doping were grown on (001) MgO by pulsed laser deposition. The microstructural studies from x-ray diffraction and transmission electron microscopy indicate that the films are highly epitaxial with c-axis oriented and atomic sharp interface. Dielectric property measurements at 1 MHz and room temperature reveal that the as-grown films have outstanding dielectric properties with large tunability of 80% at 40KV∕cm, very large dielectric constant value of 3800, and extra low dielectric loss of only 0.001. The high frequency (10–30 GHz) dielectric measurements demonstrate that the films are excellent in both dielectric property and very low dielectric insertion loss. Compared with the pure BSTO films or traditional doping, the additional doping of Mn in BSTO thin films can significantly improve the dielectric property of the as-grown films.

High dielectric CaCu3Ti4O12 (CCTO) thin films were epitaxially grown on (001) LaAlO3 (LAO) substrates by pulsed laser deposition. Microstructural studies by x-ray diffraction, pole figure measurements, and transmission electron microscopy show that the as-grown films are good single crystalline quality with an interface relationship of (001)CCTO//(001)LAO and [100]CCTO//[100]LAO. Dielectric property measurements show that the films have an extremely high dielectric constant with value of 10 000 at 1 MHz at room temperature. It is interesting to note that the twinned substrate results in the formation of twinning or dislocations inside the CCTO film.