In this paper, we investigated the degradation of 280 nm ultraviolet light emitting diodes (UV-LEDs) using both optical and electrical characterization methods. By capacitance–voltage methods, we were able to reveal that carriers in the quantum wells closer to the sapphire substrate would redistribute with aging time and stress currents. We compared these distributions with simulations and found that both the polarization charges at the AlGaN/AlGaN heterostructure interface and the quantum well doping were significantly affected by the stress. These results indicated that the migration and diffusion of donor impurities/dislocations under the current flow could lead to the deterioration of the quantum well crystal quality and contribute to the attenuation of optical power. Our study suggests a novel mechanism for degradation of UV-LEDs, and the developed techniques provide a new approach for future reliability analysis.

We report the degradation study on AlGaN-based 265 nm ultraviolet light emitting diodes (UV-LEDs) under a series of constant current stress. The failure mechanisms were investigated systematically by measuring the optical and electrical characteristics of the LEDs before and after aging. The variation of carrier concentration in the active region was analyzed by capacitance-voltage. Combining the extracted apparent charge distribution pro les with the simulation results of the devices before and after the stress, we found that the change of carrier concentration in the multiple quantum wells was related to the donor diffusion on the n-side. On the p-side, both the acceptor concentration of electron blocking layer (EBL) and the defects in p-GaN contact layer were also found to be under constant change. The reduction of the EBL doping concentration has contributed to an increase of the diode depletion width during the stress. The changes in the LEDs before and after stressing indicate a compensating effect occurred in the p-type EBL close to the quantum wells, which leads to the degradation of the optical power of the 265 nm UV-LEDs.

The metal-semiconductor direct current triboelectric nanogenerator (MSDC-TENG) has attracted increasing attention due to its power density, which is 102−103 times higher than traditional generators. A P-type GaN based MSDC-TENG with a tin electrode is reported in this paper. By adjusting the Mg2+ doping concentration of the P-GaN, it can achieve an open circuit voltage (Voc) of 14.2 V and a short circuit current (Isc) density of ∼25.5 A/m2. This Isc is about 50 times higher than the performance of the Cu/GaN Triboelectric Nanogenerator, and the power density increases by more than 120 times. Under the experimental loading conditions, we also obtained the maximum load current density and the maximum load power of 12.8 and 102.4 W/m2, respectively. This power density is sufficient to drive small electronic circuits. Our results also provide useful insights into the carrier concentration-Isc relation in the Cu/GaN triboelectric nanogenerator.

Thermal droop, i.e., the loss of emission efficiency over a certain temperature range, is an important performance bottleneck for the successful commercial application of deep-ultraviolet light emitting diodes. In this study, we examined the mechanism of two thermal droop processes of 255 nm AlGaN quantum well light emitting diodes under temperature stresses in order to obtain steady optical output in a broad temperature range. We discovered that the increase in leakage current in the low forward bias region is accompanied by a decrease in apparent carrier concentration of quantum wells near the p side during the thermal droop process at high temperature (>300 K), indicating that the activation of thermal defects enhances the trap assisted tunneling effect and causes the optical power to decrease more significantly at low current. Compared with normal temperature, the low emission power at low temperatures is attributed to the minority trap H1, which has an activation energy of 0.527 eV at 190 K, according to deep level transient spectrum analysis. At low temperatures above 175 K, the optical power increases as the temperature rises due to enhanced hole injection. By analyzing the droop characteristics, we concluded that the activation of thermal defects is the most probable cause of high temperature thermal droop in 255 nm AlGaN quantum well light emitting diodes, whereas hole trap H1, which is linked to gallium vacancy complexes related defects, is most likely the source of low temperature thermal droop.

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