Carrier distribution characteristics of AlGaN-based ultraviolet light-emitting diodes at elevated temperatures

Chen, Zhiqiang; Deng, Shaodong; Min, Li; Su, Mengwei; Zhu, Xinglin; Wang, Yukun; Chen, Ziqian; Deng, Jixian; Wang, Lianshan; Sun, Wenhong

doi:10.1007/s10854-022-08621-y

Cited by 2 publications

(4 citation statements)

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“…We also studied the reliability of 276 nm and 306 nm AlGaN-based UV-LEDs for the temperature range of 303–403 K [ 55 ]. Figure 11 a shows the EL spectra of two LEDs as a function of temperature for the given range.…”

Section: Degradation Due To Current Stressmentioning

confidence: 99%

“…One of our recent explorations of ACD profile is depicted in Figure 20 a,b [ 55 ]. It was observed that the increasing temperatures causes a reduction in peak height, but also increases its width.…”

Section: Degradation Effects On C–v Characteristicsmentioning

confidence: 99%

“…Recently we have calculated we have used I-V curves to find the ideality factor η and characteristic energy level E T ( E T = ηkT ) [ 55 ]. How each of these two parameters behave with the change in temperature is explained in Figure 29 , inset.…”

Section: Degradation Effects On I–v Characteristicsmentioning

confidence: 99%

“… ( a ) The ACD profiles of 276 nm LED at different temperatures, obtained from CV measurements at 1 MHz versus depletion depth ( b ) 1D simulation and experimental data of ACD profiles. [ 55 ] Copyright 2022, Springer. …”

Section: Figurementioning

confidence: 99%

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Reliability Analysis of AlGaN-Based Deep UV-LEDs

2022

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The current pandemic crisis caused by SARS-CoV-2 has also pushed researchers to work on LEDs, especially in the range of 220–240 nm, for the purpose of disinfecting the environment, but the efficiency of such deep UV-LEDs is highly demanding for mass adoption. Over the last two decades, several research groups have worked out that the optical power of GaN-based LEDs significantly decreases during operation, and with the passage of time, many mechanisms responsible for the degradation of such devices start playing their roles. Only a few attempts, to explore the reliability of these LEDs, have been presented so far which provide very little information on the output power degradation of these LEDs with the passage of time. Therefore, the aim of this review is to summarize the degradation factors of AlGaN-based near UV-LEDs emitting in the range of 200–350 nm by means of combined optical and electrical characterization so that work groups may have an idea of the issues raised to date and to achieve a wavelength range needed for disinfecting the environment from SARS-CoV-2. The performance of devices submitted to different stress conditions has been reviewed for the reliability of AlGaN-based UV-LEDs based on the work of different research groups so far, according to our knowledge. In particular, we review: (1) fabrication strategies to improve the efficiency of UV-LEDs; (2) the intensity of variation under constant current stress for different durations; (3) creation of the defects that cause the degradation of LED performance; (4) effect of degradation on C-V characteristics of such LEDs; (5) I-V behavior variation under stress; (6) different structural schemes to enhance the reliability of LEDs; (7) reliability of LEDs ranging from 220–240 nm; and (8) degradation measurement strategies. Finally, concluding remarks for future research to enhance the reliability of near UV-LEDs is presented. This draft presents a comprehensive review for industry and academic research on the physical properties of an AlGaN near UV-LEDs that are affected by aging to help LED manufacturers and end users to construct and utilize such LEDs effectively and provide the community a better life standard.

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Section: Degradation Due To Current Stressmentioning

confidence: 99%

Section: Degradation Effects On C–v Characteristicsmentioning

confidence: 99%

Section: Degradation Effects On I–v Characteristicsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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