A Cu/P-type GaN triboelectric nanogenerator with power density over 100 W/m2

Abstract

The metal-semiconductor direct current triboelectric nanogenerator (MSDC-TENG) has attracted increasing attention due to its power density, which is 102−103 times higher than traditional generators. A P-type GaN based MSDC-TENG with a tin electrode is reported in this paper. By adjusting the Mg2+ doping concentration of the P-GaN, it can achieve an open circuit voltage (Voc) of 14.2 V and a short circuit current (Isc) density of ∼25.5 A/m2. This Isc is about 50 times higher than the performance of the Cu/GaN Triboelectric Nanogenerator, and the power density increases by more than 120 times. Under the experimental loading conditions, we also obtained the maximum load current density and the maximum load power of 12.8 and 102.4 W/m2, respectively. This power density is sufficient to drive small electronic circuits. Our results also provide useful insights into the carrier concentration-Isc relation in the Cu/GaN triboelectric nanogenerator.

Direct-Current Triboelectric Nanogenerators Based on Semiconductor Structure

“…Upon adjusting the carrier concentration of p-GaN, the power density was over 100 W/ m 2 when the friction area was 1.5 × 1.5 mm 2 . 19 At the beginning of our research, the performance of the new Cu/ GaN MSDC-TENG prepared by us was not satisfactory (V oc ≈ 5.6 V, I sc density ≈ 0.5 A/m 2 ). With the increase of carrier…”

“…In particular, our group doped the third-generation semiconductor material GaN with Mg 2+ to form p-GaN and improved the current density of a Cu/p-GaN triboelectric nanogenerator (Figure a). Upon adjusting the carrier concentration of p-GaN, the power density was over 100 W/m 2 when the friction area was 1.5 × 1.5 mm 2 . At the beginning of our research, the performance of the new Cu/GaN MSDC-TENG prepared by us was not satisfactory ( V oc ≈ 5.6 V, I sc density ≈ 0.5 A/m 2 ).…”

“…(d, e) Change of depletion region before and after carrier concentration change: ID, IR, and IE inside the dynamic Schottky generator (ID, IR, and IE are the diffused electron, rebound hot-electron, and diffused electron, respectively). Reproduced with permission from ref . Copyright 2022 AIP Publishing.…”

“…Since contact electrification (triboelectrification) was recorded more than 2600 years ago, self-powered systems have emerged with the rapid development of technology and the expansion of the information age. , The rapid advancement of electronic equipment is accompanied by trends of miniaturization, mobility, and multifunctionality, like the miniaturization of sensors and wireless nodes for the Internet of Things (IoTs). − In the near future, the electronic devices around us will be much smaller than the size of mobile phones . It is not practical to power an entire sensor network with only batteries, which would create problems such as being difficult to track and recycle, as well as possible environmental pollution and health hazards. , Meanwhile, the demand for electronic devices, and especially the power supply of electronic devices, is getting higher and higher with the popularization of functional devices. − Hence, portable maintenance-free self-powered systems have gradually entered people’s vision and aroused widespread concern . A self-powered system can collect energy from the surrounding environment and convert it into electrical energy to provide a power supply for the operation of functional devices in the system, realizing specific functions independently and operation continuously …”

Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process

“…Dynamic semiconductor physics has emerged as the platform of exploring the novel semiconductor devices since the dynamic Schottky diode has been proposed [1,2]. Since the discovery of DD in 2018 [1], the novel and ultrafast mechanical-electrical coupling process at the solid-solid/solid-liquid interfacial barrier has been taken seriously due to groundbreaking physical picture, especially the unusual excitation, rebound, and transport of HCs induced by the mechanical input, which has brought the births of various evidences including the dynamic PN/Schottky/heterojunction [1,[3][4][5][6][7][8][9][10], polarized solution based DD [11,12], tunneling DD [2,10], and nonlinear synergy DD [13][14][15][16]; some excellent characters like direct-current output, high current density, flexibility, suitable inner resistance, and easy fabrication have also been proven [1,2,5], and the integrable ability has also been illustrated in recent works [17][18][19].…”