This paper reviews the development history and current status of HgCdTe based IR detector of which the study had started from 1980's in South Korea. It covers the fields from single element diode to 2-dimensional IR detector as well as dewar technology. The past studies of large area single element diode, linear array detector, 2-D IRFPAs are reported which include HgCdTe diode array, ROIC and hybridization technologies. Thanks to the sound cooperation between academia, research institute, industry, and government, current progress of 2-D IR detector shows high performance and reliability to be able to be utilized in fields. Finally, prospective future of IR detector in Korea is addressed.
-In this paper, we study the temperature change of a μ-bolometer focal plane array with a capacitive transimpedance amplifier bias cancellation circuit. Thermal analysis is essential to understand the performance of a μ -bolometer focal plane array, and to improve the temperature stability of a focal plane array characteristics. In this study, the thermal analyses of a μ-bolometer and its two reference detectors are carried out as a function of time. The analyses are done with the 30㎛ pitch 320x240 focal plane array operating of 60 Hz frame rate and having a columnwise readout. From the results, the temperature increase of a μ-bolometer in FPA by an incident IR is estimated as 0.689 ℃, while the temperature increase by a pulsed bias as 7.1 ℃, which is about 10 times larger than by IR. The temperature increase of a reference detector by a train of bias pulses may be increased much higher than that of an active μ -bolometer. The suppression of temperature increase in a reference bolometer can be done by increasing the thermal conductivity of the reference bolometer, in which the selection of thermal conductivity also determines the range of CTIA output voltage.
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