Parity-time (PT) symmetry and associated non-Hermitian properties in open physical systems have been intensively studied in search of new interaction schemes and their applications. Here, we experimentally demonstrate an electrical circuit producing key non-Hermitian properties and unusual wave dynamics grounded on anti-PT (APT) symmetry. Using a resistively coupled amplifying-LRC-resonator circuit, we realize a generic APT-symmetric system that enables comprehensive spectral and time-domain analyses on essential consequences of the APT symmetry. We observe an APT-symmetric exceptional point (EP), inverse PT-symmetry breaking transition, and counterintuitive energy-difference conserving dynamics in stark contrast to the standard Hermitian dynamics keeping the system’s total energy constant. Therefore, we experimentally confirm unique properties of APT-symmetric systems, and further development in other areas of physics may provide new wave-manipulation techniques and innovative device-operation principles.
Optical metasurfaces are starting to find their way into integrated devices, where they can enhance and control the emission, modulation, dynamic shaping, and detection of light waves. In this study, we show that the architecture of organic light-emitting diode (OLED) displays can be completely reenvisioned through the introduction of nanopatterned metasurface mirrors. In the resulting meta-OLED displays, different metasurface patterns define red, green, and blue pixels and ensure optimized extraction of these colors from organic, white light emitters. This new architecture facilitates the creation of devices at the ultrahigh pixel densities (>10,000 pixels per inch) required in emerging display applications (for instance, augmented reality) that use scalable nanoimprint lithography. The fabricated pixels also offer twice the luminescence efficiency and superior color purity relative to standard color-filtered white OLEDs.
We study spectral singularities and critical field enhancement factors associated with embedded photonic bound states in subwavelength periodic Si films. Ultrahigh-Q resonances supporting field enhancement factor exceeding 108 are obtained in the spectral vicinity of exact embedded eigenvalues in spite of deep surface modulation and vertical asymmetry of the given structure. Treating relations between the partial resonance Q and field enhancement factors with an analytical coupled-mode model, we derive a general strategy to maximize the field enhancement associated with these photonic bound states in the presence of material dissipation. The analytical expression for the field enhancement quantitatively agrees with rigorous numerical calculations. Therefore, our results provide a general knowledge for designing practical resonance elements based on optical bound states in the continuum in various applications.
Topological operations around exceptional points-time-varying system configurations associated with non-Hermitian singularities-have been proposed as a robust approach to achieving far-reaching open-system dynamics, as demonstrated in highly dissipative microwave transmission and cryogenic optomechanical oscillator experiments. In stark contrast to conventional systems based on closed-system Hermitian dynamics, environmental interferences at exceptional points are dynamically engaged with their internal coupling properties to create rotational stimuli in fictitious-parameter domains, resulting in chiral systems that exhibit various anomalous physical phenomena. To achieve new wave properties and concomitant device architectures to control them, realizations of such systems in application-abundant technological areas, including communications and signal processing systems, are the next step. However, it is currently unclear whether non-Hermitian interaction schemes can be configured in robust technological platforms for further device engineering. Here we experimentally demonstrate a robust silicon photonic structure with photonic modes that transmit through time-asymmetric loops around an exceptional point in the optical domain. The proposed structure consists of two coupled silicon-channel waveguides and a slab-waveguide leakage-radiation sink that precisely control the required non-Hermitian Hamiltonian experienced by the photonic modes. The fabricated devices generate time-asymmetric light transmission over an extremely broad spectral band covering the entire optical telecommunications window (wavelengths between 1.26 and 1.675 micrometres). Thus, we take a step towards broadband on-chip optical devices based on non-Hermitian topological dynamics by using a semiconductor platform with controllable optoelectronic properties, and towards several potential practical applications, such as on-chip optical isolators and non-reciprocal mode converters. Our results further suggest the technological relevance of non-Hermitian wave dynamics in various other branches of physics, such as acoustics, condensed-matter physics and quantum mechanics.
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