Parity-time (PT) symmetry and associated non-Hermitian properties in open physical systems have been intensively studied in search of new interaction schemes and their applications. Here, we experimentally demonstrate an electrical circuit producing key non-Hermitian properties and unusual wave dynamics grounded on anti-PT (APT) symmetry. Using a resistively coupled amplifying-LRC-resonator circuit, we realize a generic APT-symmetric system that enables comprehensive spectral and time-domain analyses on essential consequences of the APT symmetry. We observe an APT-symmetric exceptional point (EP), inverse PT-symmetry breaking transition, and counterintuitive energy-difference conserving dynamics in stark contrast to the standard Hermitian dynamics keeping the system’s total energy constant. Therefore, we experimentally confirm unique properties of APT-symmetric systems, and further development in other areas of physics may provide new wave-manipulation techniques and innovative device-operation principles.
Topological operations around exceptional points-time-varying system configurations associated with non-Hermitian singularities-have been proposed as a robust approach to achieving far-reaching open-system dynamics, as demonstrated in highly dissipative microwave transmission and cryogenic optomechanical oscillator experiments. In stark contrast to conventional systems based on closed-system Hermitian dynamics, environmental interferences at exceptional points are dynamically engaged with their internal coupling properties to create rotational stimuli in fictitious-parameter domains, resulting in chiral systems that exhibit various anomalous physical phenomena. To achieve new wave properties and concomitant device architectures to control them, realizations of such systems in application-abundant technological areas, including communications and signal processing systems, are the next step. However, it is currently unclear whether non-Hermitian interaction schemes can be configured in robust technological platforms for further device engineering. Here we experimentally demonstrate a robust silicon photonic structure with photonic modes that transmit through time-asymmetric loops around an exceptional point in the optical domain. The proposed structure consists of two coupled silicon-channel waveguides and a slab-waveguide leakage-radiation sink that precisely control the required non-Hermitian Hamiltonian experienced by the photonic modes. The fabricated devices generate time-asymmetric light transmission over an extremely broad spectral band covering the entire optical telecommunications window (wavelengths between 1.26 and 1.675 micrometres). Thus, we take a step towards broadband on-chip optical devices based on non-Hermitian topological dynamics by using a semiconductor platform with controllable optoelectronic properties, and towards several potential practical applications, such as on-chip optical isolators and non-reciprocal mode converters. Our results further suggest the technological relevance of non-Hermitian wave dynamics in various other branches of physics, such as acoustics, condensed-matter physics and quantum mechanics.
Time-asymmetric state-evolution properties while encircling an exceptional point are presently of great interest in search of new principles for controlling atomic and optical systems. Here, we show that encircling-an-exceptional-point interactions that are essentially reciprocal in the linear interaction regime make a plausible nonlinear integrated optical device architecture highly nonreciprocal over an extremely broad spectrum. In the proposed strategy, we describe an experimentally realizable coupled-waveguide structure that supports an encircling-an-exceptional-point parametric evolution under the influence of a gain saturation nonlinearity. Using an intuitive time-dependent Hamiltonian and rigorous numerical computations, we demonstrate strictly nonreciprocal optical transmission with a forward-to-backward transmission ratio exceeding 10 dB and high forward transmission efficiency (∼100%) persisting over an extremely broad bandwidth approaching 100 THz. This predicted performance strongly encourages experimental realization of the proposed concept to establish a practical on-chip optical nonreciprocal element for ultra-short laser pulses and broadband high-density optical signal processing.
Recently, synthetic optical materials represented via non-Hermitian Hamiltonians have attracted significant attention because of their nonorthogonal eigensystems, enabling unidirectionality, nonreciprocity and unconventional beam dynamics. Such systems demand carefully configured complex optical potentials to create skewed vector spaces with a desired metric distortion. In this paper, we report optically generated non-Hermitian photonic lattices with versatile control of real and imaginary sub-lattices. In the proposed method, such lattices are generated by vector-field holographic interference of two elliptically polarized pump beams on azobenzene-doped polymer thin films. We experimentally observe violation of Friedel's law of diffraction, indicating the onset of complex lattice formation. We further create an exact parity-time symmetric lattice to demonstrate totally asymmetric diffraction at the spontaneous symmetry-breaking threshold, referred to as an exceptional point. On this basis, we provide the experimental demonstration of reconfigurable non-Hermitian photonic lattices in the optical domain and observe the purest exceptional point ever reported to date.
We fabricate plasmonic heptamer-arranged nanohole (HNH) arrays by helium (He) focused ion beam (HeFIB) milling, which is a resist-free, maskless, direct-write method. The small He+ beam spot size and high milling resolution achieved by the gas field-ionization source used in our HeFIB allows the milling of high aspect ratio (4:1) nanoscale features in metal, such as HNHs incorporating 15 nm walls of high verticality between holes in a 55-nm-thick gold film. Drifts encountered during the HeFIB milling of large arrays, due to sample stage vibrations or He beam instability, were compensated by a drift correction technique based on in situ He ion imaging of alignment features. Our drift correction technique yielded 20 nm maximum dislocation of HNHs, with 6.9 and 4.6 nm average dislocations along the horizontal and vertical directions, respectively. The measured optical resonance spectra of the fabricated plasmonic HNH arrays are presented to support the fabrication technique. Defects associated with HeFIB milling are also discussed.
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