Submicron patterning technologies for the PZT/Pt/Ti/TiN/Ti structure with a spin on glass (SOG) mask were demonstrated using a high-density ECR plasma and a high substrate temperature above 300° C. A 30%-Cl2/Ar gas was used to etch a lead zirconate titanate (PZT) film. No deposits remained, which resulted in an etched profile of more than 80°. A 40%-O2/Cl2 gas was used to etch a Pt film. The etching was completely stopped at the Ti layer. 30-nm-thick deposits remained on the sidewall. They were removed after dipping in hydrochloric acid. The etched profile of a Pt film was more than 80°. The Ti/TiN/Ti layer was etched with pure Cl2 gas. The size shift from the SOG mask was less than 0.1 µ m. Interdiffusion between SOG and PZT was not detected by transmission electron microscopy and energy dispersive X-ray spectroscopy (TEM-EDX) analysis.

We propose a method to calculate percolation thresholds pE and their error bars Apc of two-dimensional (2D) lattices. The characteristic feature of our method is an efficient extraction of information from the results of Monte Carlo (MC) simulations. We apply this method to some ZD systems such as a square, KagomC and dice lattice, Penrose tiling and a Penrose dual lattice. Our method enables us to estimate thresholds very accurately even when we use the MC data obtained from fairly small sizes. For instance, we achieve three significant figures for pc from the MC data obtained from lattices with sizes less than 300 x 300 and the increment 0.002 of p.

A 0.23 inch nHD+ OLED microdisplay has been developed with high-resolution 7.8μm pixel pitch, long life, and lower power consumption than prior OLED microdisplays. This newly developed OLED microdisplay is suitable for wearable displays and viewfinders. A 0.39 inch XGA and 0.7 inch Full-HD microdisplay will also be discussed.

We have developed a high-definition (0.5-inch

4H‐SiC bipolar junction transistors (BJTs) are one of the promising candidates for next‐generation power devices. 4H‐SiC BJTs have the advantages of low on‐resistance and high temperature capability. On the other hand, high common emitter current gain is required from a practical use point of view because BJTs are current‐controlled devices. In order to improve the current gain of 4H‐SiC BJTs, we have concentrated on suppressing surface recombination on the SiC surface, which is a critical limiting factor of the current gain and can be suppressed by reducing carrier density and/or trap density. We have proposed novel 4H‐SiC bipolar junction transistors with suppressed surface‐recombination structure: SSR‐BJTs that have the SiC surface with low carrier density, characterized by a lightly doped n‐type layer (LDN layer) and a highly resistive p‐type region (HRP region). In addition, surface passivation suitable for reducing surface traps has been investigated by applying a new characterization method of surface‐recombination current in which the sp · Ls value, a product of a surface‐recombination velocity (sp) and a surface‐diffusion length (Ls), is derived from an analysis of forward I–V characteristics of SiC pn diodes. We have experimentally demonstrated that the sp · Ls value is a practical indicator to evaluate surface passivation. By using the characterization, an effective passivation method with the combination of a pyrogenic oxidation, a post‐oxidation anneal in H2 ambient, and an anneal in NH3 ambient has been developed. SSR‐BJTs with a variety of device structures and process conditions have been fabricated to investigate their characteristics. A fabricated SSR‐BJT showed a recorded maximum current gain of 134 at room temperature with a specific on‐resistance of 3.2 mΩ cm2 and a blocking voltage VCEO of 950 V. The SSR‐BJT kept a current gain of 60 °C at 250 °C with a specific on‐resistance of 8 mΩ cm2. These results have demonstrated the outstanding current‐gain capability of the SSR‐BJTs compared to conventional BJTs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

A high-cell-density perfusion culture process, using a novel centrifuge, was developed. The centrifuge has spiral multiple settling zones to separate cells from culture medium. Because of the multiple zones, the separation area can be efficiently increased without enlarging the diameter of the centrifuge. The centrifuge used in this study had a separation capacity of 2600 ml culture medium min -1 at 100 g of the centrifugal force. A new cell separation and withdrawal method was also developed. The cells separated in the centrifuge can be withdrawn easily from the centrifuge with no cell clogging by feeding a liquid carrier such as a perfluorocarbon into the centrifuge and pushing the cells out with the liquid carrier. By this culture process, monoclonal antibodies were produced with mouse-human hybridoma X87X at a cell density of about 8 x 10(6) cells ml -1 for 25 days. This centrifuge culture shows promise as a large-scale perfusion culture process. (Himmelfarb et al. 1969; Feder and Tolbert 1983) usually have the problem of filter clogging, and perfusion culture processes with gravitational cell settling (Tokashiki and Arai 1989) are limited in scale-up because of low separation efficiency. Recently centrifugal separation of cells from culture medium has been used for perfusion culture processes (Hamamoto et al. 1989; Tokashiki et al. 1990; Apelman 1992; Jäger 1992). This process essentially has a high separation efficiency and can avoid further operational problems, such as filter clogging, by the type of filtration. To investigate the scale-up feasibility of the centrifuge culture system, we have developed a new type of centrifuge with four layers of spiral cell-settling zones to increase the separation area, and a novel cell separation and withdrawal method using a perfluorocarbon.

The subnuicron patterning technologies for the pzt/pt/tilTiN/fi structure with a SOG mask was demonstrated using a high density ECR plasma and a high substrate temperature above 300"C. A 30t-C1./Ar gas rras used to etch a PzT film. No deposits remained, which resulted in the etched profile more than 80". The 40t-O./CL' gas waE used to etch a Pt film. The etching was completely stopped at the Ti layer. The 30 nm thick deposits remained on the side waII. It was removed after dipping in the acid solution. And the etched profile of a Pt film was more than 80o. The TilTiN/fi layer was etched with the pure Cl. gas. The CD loss was less than 0.L Fm. The interdiffusion between SOG and PZT was not found by the IEM analysis.

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