“…6 Several attempts have been made to improve the film microstructure and, hence, the ferroelectric properties at lower annealing temperatures by either making the Sr/Bi/Ta atomic ratio slightly off-stoichiometric or annealing the films under low oxygen pressure conditions. 7,8 The problem of pyrochlore phase formation was eliminated by using the modified metalorganic solution deposition ͑MOSD͒ technique which provided pyrochlore free crystalline SrBi 2 Ta 2 O 9 thin films even at a low annealing temperature of 600°C. 9 However, no well-defined approach has been established to solve the problems of high processing temperature, low P r , and low T c .…”