High Temperature Etching of PZT/Pt/TiN Structure by High Density ECR Plasma

Abstract

The subnuicron patterning technologies for the pzt/pt/tilTiN/fi structure with a SOG mask was demonstrated using a high density ECR plasma and a high substrate temperature above 300"C. A 30t-C1./Ar gas rras used to etch a PzT film. No deposits remained, which resulted in the etched profile more than 80". The 40t-O./CL' gas waE used to etch a Pt film. The etching was completely stopped at the Ti layer. The 30 nm thick deposits remained on the side waII. It was removed after dipping in the acid solution. And the etched profile of a Pt film was more than 80o. The TilTiN/fi layer was etched with the pure Cl. gas. The CD loss was less than 0.L Fm. The interdiffusion between SOG and PZT was not found by the IEM analysis.

Ion beam etching of PZT thin films: Influence of grain size on the damages induced

“…So it is very important today to understand more precisely the mechanisms of degradations. Several techniques have been developed for patterning: wet chemical etching, 1 ion beam etching (IBE), 2 reactive ion etching (RIE), 3,4 electron cyclotron resonance (ECR) etching, 5 and inductively coupled plasma (ICP) etching. 6 The technique used in this study is the IBE (pure Ar beam).…”

Reactive Ion Beam Etching of PZT Thin Films

“…Various gas mixtures have been investigated: Cl 2 /C 2 F 6 /Ar [7], Cl 2 /Ar [6], CF 4 /CCl 4 /Ar [8], Cl 2 /BCl 3 [9]. Influence of etching parameters on the electrical damage evolution has already been studied in the case of chemically assisted bombardment.…”

“…Patterning of PZT films has become an essential element of device fabrication. Several techniques have been developed for etching: wet chemical etching [1], ion beam etching (IBE) [2], reactive ion etching (RIE) [3][4][5], electron cyclotron resonance (ECR) etching [6], and inductively coupled plasma (ICP) etching [7].…”

Development of a self‐heated‐stage for high‐speed process of titanium by reactive ion etching

“…In recent years, etching using chlorine-based gas and inductively coupled reactive ion etching (ICP-RIE) equipment has enabled the deep reactive-ion etching (DRIE) of titanium, and application to sensor devices has progressed. 1 Regardless, this method requires expensive apparatuses and safety equipment, and the cost has proved to be an obstacle to adoption. To solve this problem, we invented thermally assisted reactive-ion-etching (TRIE).…”