We present a computationally efficient, two-dimensional quantum mechanical simulation scheme for modeling dissipative electron transport in thin body, fully depleted, n-channel, silicon-on-insulator transistors. The simulation scheme, which solves the nonequilibrium Green's function equations self consistently with Poisson's equation, treats the effect of scattering using a simple approximation inspired by the ''Büttiker probes,'' often used in mesoscopic physics. It is based on an expansion of the active device Hamiltonian in decoupled mode space. Simulation results are used to highlight quantum effects, discuss the physics of scattering and to relate the quantum mechanical quantities used in our model to experimentally measured low field mobilities. Additionally, quantum boundary conditions are rigorously derived and the effects of strong off-equilibrium transport are examined. This paper shows that our approximate treatment of scattering, is an efficient and useful simulation method for modeling electron transport in nanoscale, silicon-on-insulator transistors.
A simple quantum mechanical treatment of scattering in nanoscale transistorsWe apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the nonequilibrium Green's function equations self-consistently with Poisson's equation and treats the effect of scattering using a simple approximation inspired by Büttiker. It is based on an expansion of the device Hamiltonian in coupled mode space. Simulation results are used to highlight quantum effects and discuss the importance of scattering when examining the transport properties of nanoscale transistors with differing channel access geometries. Additionally, an efficient domain decomposition scheme for evaluating the performance of nanoscale transistors is also presented. This article highlights the importance of scattering in understanding the performance of transistors with different channel access geometries.
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