nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs

Ren, Zhibin; Venugopal, R.; Goasguen, Sebastien; Datta, Supriyo; Lundstrom, Mark

doi:10.1109/ted.2003.816524

Cited by 253 publications

(63 citation statements)

References 24 publications

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“…1(d)]. [21][22][23][24] This decoupling treatment returns the identical solution as the real space approach below the body thickness of 5 nm, 22) which is consistent with this work t Si ¼ 3 nm. The eigenfunction of the 2D system Éðx; zÞ of eq.…”

Section: Simulation Methodssupporting

confidence: 79%

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Schottky-Barrier Metal–Oxide–Semiconductor Field-Effect Transistors as Resonant Tunneling Devices

Toriyama¹

2010

Jpn. J. Appl. Phys.

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The current-voltage characteristics of double-gated Schottky-barrier metal-oxide-semiconductor field-effect transistor (MOSFET) 10 nm in length and with body thickness of 3 nm is numerically studied, illustrating a similarity between the rectangular quantum well cavity in conventional resonant tunneling diodes and the parabolic-like cavity created by a pair of Schottky junctions in scaled Schottky-barrier MOSFETs. Assuming ballistic transport for electrons within effective mass approximation, the appearance of negative differential resistance due to the resonant tunneling effect between the Schottky junctions of 0.75 eV height is confirmed by non-equilibrium Green's function simulation. In such scaled Schottky-barrier MOSFETs, the tunneling electrons by themselves determine the shape of resonant potential, through the charge terms in electrostatic field equations. Using both the Poisson equation and the Laplace equation, we highlight the importance of the self-consistency for realizing successful resonant tunneling operation in scaled Schottky-barrier MOSFETs. #

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Section: Simulation Methodssupporting

confidence: 79%

“…(4), we employ @ i ðx; zÞ=@x % 0 condition. 23) It corresponds to the assumption that the shape of i ðx; zÞ at x along the confinement direction z is almost the same as that at x À x and that at x þ x. This assumption is clearly invalid when the intrinsic Si channel thickness t si [ Fig.…”

Section: Quantum Transport and Current Expressionmentioning

confidence: 99%

Schottky-Barrier Metal–Oxide–Semiconductor Field-Effect Transistors as Resonant Tunneling Devices

Toriyama¹

2010

Jpn. J. Appl. Phys.

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“…This difference in electrochemical potential is giving rise two different fermi function and accordingly each contact seeks to bring the channel into equilibrium. Source injects the flux of carriers into the device some carriers reflected in order to potential barriers within the device and the rest pass through the channel toward the drain (Ren et al, 2003;Datta, 2005). We treat the carriers as the semiclassical particles and the Boltzman equation for finding the distribution function ƒ (r, k, t) should be considered.…”

Section: Resultsmentioning

confidence: 99%

“…The operation of the MOSFET's and other nanowire transistors in semiclassical or ballistic regime has been explained by analytical models (Javey et al, 2002;Datta et al, 1998;Abdul-Rahman and Wang, 2010) and some numerical simulations (Assad et al, 2000;Ren et al, 2003).…”

Section: Introductionmentioning

confidence: 99%

Study the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography

Dehzangi

Larki

Saion

et al. 2011

American Journal of Applied Sciences

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Problem statement: Nanotransistor now is one of the most promising fields in nanoelectronic in order to less energy consuming and application to create developed programmable information processors. Most of Computing and communications companies invest hundreds of millions of dollars in research funds every year to develop smaller transistors. Approach: The Junction-less side gate silicon Nano-wire transistor has been fabricated by Atomic Force Microscopy (AFM) and wet etching on p-type Silicon On Insulator (SOI) wafer. Then, we checked the characteristic and conductance trend in this device regarding to semi-classical approach by Semiconductor Probe Analyser (SPA). Results: We observe in characteristic of the device directly proportionality of the negative gate voltage and Source-Drain current. In semi classical approach, negative Gate voltage falling down the energy States of the Nano-wire between the source and the drain. The graph for positive gate voltage plotted as well to check. In other hand, the conductance will be following characteristic due to varying the gate voltage under the different drain-source voltage. Conclusion: The channel energy states are supposed to locate between two electrochemical potentials of the contacts in order to transform the charge. For the p-type channel the transform of the carriers is located in valence band and changing the positive or negative gate voltage, make the valence band energy states out of or in the area between the electrochemical potentials of the contacts causing the current reduced or increased.

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“…In Si, it suffices for a carrier to experience a single inelastic scattering event to lose an energy of 2k b T (see Table 1). Since the characteristic energy in the channel is of the order of k b T, this carrier will not have enough energy to return back to the channel [155]. Because of ''Brownian-like'' motion due to frequent elastic scattering, the characteristic distance between the two inelastic scatterings is proportional to the geometric average l ¼ ffiffiffiffiffiffiffiffi ffi l el l in p of the elastic l el and inelastic l in mean free paths in the contacts, which would be about 10 nm in heavily doped Si.…”

Section: Ballistic Transport and Tunnelingmentioning

confidence: 99%

Current transport models for nanoscale semiconductor devices

Sverdlov

Ungersboeck

Kosina

et al. 2008

Materials Science and Engineering: R: Reports

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nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs

Cited by 253 publications

References 24 publications

Schottky-Barrier Metal–Oxide–Semiconductor Field-Effect Transistors as Resonant Tunneling Devices

Schottky-Barrier Metal–Oxide–Semiconductor Field-Effect Transistors as Resonant Tunneling Devices

Study the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography

Current transport models for nanoscale semiconductor devices

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