The ambipolar behavior limits the performance of carbon nanotube field-effect transistors. A double-gate device is proposed to suppress this behavior. In this device, the first gate controls carrier injection at the source contact and the second one controls carrier injection at the drain contact, which can be used to suppress parasitic carrier injection. The effect of the second gate voltage on the performance of the device has been investigated. Our results indicate that by applying a proper voltage range to the second gate, improved device characteristics can be achieved.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.