We report on DC and RF measurement results of AlScN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapor deposition (MOCVD). Comparing the properties with those of a wafer grown with the same MOCVD tool but featuring an Al-GaN barrier, the sheet carrier density (ns) of 1.50 × 10 13 cm −2 measured on the AlScN/GaN wafer is around 60 % higher. This translates to a power density (Pout) of 8.4 W/mm at a frequency of 30 GHz and a drain bias of 30 V. Also, a high power-added efficiency (PAE) of 48.9 % and 46.1 % is reached, when biased at 25 V and 30 V, respectively. These early results illustrate the great potential AlScN/GaN devices carry for improving on the achievable output power on device level at millimeter-wave (mmWave) frequencies.
In this paper the recent use AlGaN/GaN high electron mobility transistors (HEMTs) and integrated circuits on both semi‐insulating silicon carbide (SiC) and silicon substrates for radio communication in the microwave and mm‐wave frequency range is described. AlGaN/GaN monolithically microwave integrated circuits (MMICs) are extremely useful for point‐to‐point (P2P)‐links in the backbones of the 4th and upcoming 5th generation of mobile communication networks as power amplifiers, as they provide a great amount of linear power. At the same time GaN‐based power conversion electronics has driven the advancement of the growth of AlGaN/GaN heterostructures on conductive silicon (111) substrates. This again has indirectly led to advancements in the growth capabilities of AlGaN/GaN heterostructures on highly‐resistive (HR) silicon substrates. The paper gives examples of transistors and microstrip transmission‐line‐based MMICs realized in a direct comparison of GaN on s.i. SiC and GaN on HR‐silicon. Constraints and performances for highly‐efficient MMICs are discussed up to mm‐wave frequencies beyond 100 GHz.
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