High‐Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication

Quay, R.; Schwantuschke, Dirk; Ture, Erdin; Raay, F. van; Friesicke, Christian; Krause, Sebastian; Müller, Stefan; Breuer, Steffen; Godejohann, B.; Brückner, Peter

doi:10.1002/pssa.201700655

Cited by 18 publications

(7 citation statements)

References 14 publications

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“…There are several reports on GaN-on-Si power amplifier ICs at millimeter-wave frequencies: a Ka-band 8 W power amplifier in 100-nm GaN HEMT [9], a 40 GHz 12 W power amplifier with a PAE of 30% at 40 GHz (power density of 3.2 W/mm) [10], and a W-band power amplifier in 50 nm GaN HEMT producing output power of 18.3 dBm with power density of 1.35 W/mm at 94 GHz [11]. It can be concluded that the reported GaN-on-Si power amplifiers exhibit the inferior performance to GaN-on-SiC technologies at all frequencies [8]. The performance gap widens at higher frequencies like the W-band.…”

Section: Introductionmentioning

confidence: 90%

“…It is worthwhile to emphasize that the W-band power amplifier ICs mentioned above are based on GaN on silicon carbide (SiC) HEMT technologies [1][2][3][4][5][6][7], where a GaN channel is grown on the SiC substrate with a buffer layer in between [4]. They present the superior performance to GaN-on-Si HEMTs, which are grown on the Si substrate, in terms of output power, power density, and PAE at all frequency ranges [8]. The SiC substrate also exhibits lower loss and better thermal conductivity compared to the Si substrate.…”

Section: Introductionmentioning

confidence: 99%

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Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

et al. 2021

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In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

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Section: Introductionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

et al. 2021

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“…Field effect high electron mobility transistors (HEMTs) with two-dimensional electron gas (2DEG) are widely utilized as high-speed active elements of microelectronic devices [1][2][3][4]. There are often reports on new records regarding the improvement of their technology and the launch of new structures.…”

Section: Introductionmentioning

confidence: 99%

Emission processes of the interaction between the quantum well and donor deltalayer in heterostructures for pHEMTs

Ivanova¹,

Yakovlev²,

Зубков³

et al. 2019

Turk J Phys

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We present experimental and theoretical investigations of pHEMT heterostructures with AlGaAs/InGaAs/GaAs quantum wells (QWs) and/or a delta-doped layer, which can be used as active regions in transistors operating in the 4-18 GHz frequency range. Using the electrochemical capacitance-voltage setup ECV Pro we, for the first time, experimentally observed a concentration peak from the near-surface delta layer of the pHEMT structure together with a peak of QW enrichment. The capacitance of the electrolyte-semiconductor contact was measured by Agilent LCR-meter, which was connected to the electrochemical cell of ECV Pro through a specially designed relay module. Using numerical simulation of the electronic characteristics of nanoheterostructures by self-consistent solution of Schrödinger and Poisson equations we determined electrostatic potential profiles for band edges, band offsets, quantum-confinement levels, and concentration profiles of charge carriers for the samples under investigation. The impact of delta-layer position on the confined energy levels and carrier concentration in the QW was experimentally and theoretically analyzed in detail. We determined the optimal distance between the QW and delta layer, which provides the most efficient process of supply of charge carriers to the QW. The conducted work is directed at improvement of SHF devices, allowing one to increase the gain coefficient and transconductance of transistors.

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“…The GaN exhibits high breakdown voltage characteristics derived from the wide gap structure, and it is possible to exhibit an output exceeding 1 A in the HEMT structure [3]. Extant studies investigated the application of GaN-HEMTs to green ICT systems as high efficiency devices [4]. The device structure of GaN-HEMT is constructed with a superlattice structure of AlGaN and i-GaN.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Drain Current Transient Response of Gate Pulse Voltage in AlGaN / GaN High Electron Mobility Transistors

Taguchi¹,

Akahori²,

Shimazu³

et al. 2018

Adv. sci. technol. eng. syst. j.

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Recently, several studies focus on a GaN material system that exhibits a significant probability of use in power devices including wide-gap semiconductors. However, the GaN-HEMT is also a structure that easily leads to crystal defects in AlGaN and i-GaN heterojunction. The aim of the study involved investigating the cause of the current collapse in GaN-HEMT after device construction. A GaN-HEMT with a field plate structure was subject to an environmental temperature change from 300 K to 400 K. A pulse voltage was applied to the gate electrode, and the transient response characteristic of the drain current was analyzed. Given the application of the pulse voltage on the gate electrode, charging and discharging of 2 DEG carriers was repeated with respect to crystal defects near the gate electrode. The charge / discharge reduction was observed via a sampling oscilloscope as a transient response. The transient response exhibited an evident dependence on temperature change. The dependence indicated a time constant change, and thus it was possible to calculate the activation energy of crystal defects trapping carriers. The results suggested that the crystal defect evaluation of GaN-HEMT was possible via transient response analysis of 2DEG carrier by using the proposed method.

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High‐Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication

Cited by 18 publications

References 14 publications

Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

Emission processes of the interaction between the quantum well and donor deltalayer in heterostructures for pHEMTs

Analysis of Drain Current Transient Response of Gate Pulse Voltage in AlGaN / GaN High Electron Mobility Transistors

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