This paper investigates SEB physical/device mechanisms in power MOSFETs, and proposes SEB prediction model. Investigations relied on 2D TCAD simulations. Calculated SEB risk for IRF360 is consistent with ground experimental values and in-flight data.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.