A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs

Siconolfi, Sara; Hubert, G.; Artola, L.; Darracq, Frédéric; David, Jean‐Pierre

doi:10.1109/radecs.2013.6937442

Cited by 4 publications

(2 citation statements)

References 3 publications

(8 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It can be seen that the breakdown voltage decreases as the increasing of the trench depth, which is consistent with the conclusion in Ref. [13]. Therefore, in order to give enough of a margin of the breakdown voltage, the trench depth with 0.85 μm depth in the proposed structure is selected as an appropriate structure dimensions in our simulation.…”

Section: Device Parameter Characteristicssupporting

confidence: 87%

“…The breakdown voltages of the two structures are all over 150 V blocking ability. It is worth noting that the breakdown voltages of the proposed structures are slightly lower than the conventional structure due to the influence of deep trench source design [13] . For the conventional structure, the space of the depletion layer extension in the P-body region is enough before the breakdown behavior occurs.…”

Section: Device Parameter Characteristicsmentioning

confidence: 99%

See 1 more Smart Citation

Single-event burnout hardening of planar power MOSFET with partially widened trench source

et al. 2018

View full text Add to dashboard Cite

We present a single-event burnout (SEB) hardened planar power MOSFET with partially widened trench sources by three-dimensional (3D) numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region (P-well region below the N+ source). The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer (LET), which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to 0.7 pC/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications.

show abstract

Section: Device Parameter Characteristicssupporting

confidence: 87%

Section: Device Parameter Characteristicsmentioning

confidence: 99%