MOSFET gate open failure analysis in power electronics

Delepaut, Christophe; Siconolfi, Sara; Mourra, Olivier; Tonicello, Ferdinando

doi:10.1109/apec.2013.6520206

Cited by 13 publications

(4 citation statements)

References 16 publications

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“…Furthermore, continued narrow overvoltage spikes between collector and emitter may open the gate-emitter resistance resulting of a loss in the driving signal and misfiring of the IGBT [16]. This can result in thermal breakdown [17]. Also, as modern IGBTs can work at much higher temperatures than the gate drive circuit components the driver circuit could suffer from the thermal effects in such a scenario.…”

Section: A Converter Failure Mechanismsmentioning

confidence: 99%

A Review of Methods to Increase the Availability of Wind Turbine Generator Systems

Shipurkar¹,

Polinder²,

Ferreira³

2016

CPSS TPEA

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Abstract-Availability is an important factor to be considered when designing wind turbine generator systems. The quest for increased availability is based on the following five design approaches -design for component reliability, active control for reliability, design for fault tolerance, prognostics, and design for maintainability. This paper reviews methods focussing on the first three, i.e. component reliability, active control, and fault tolerance. The paper further identifies some promising directions for further research.

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Section: A Converter Failure Mechanismsmentioning

confidence: 99%

A Review of Methods to Increase the Availability of Wind Turbine Generator Systems

Shipurkar¹,

Polinder²,

Ferreira³

2016

CPSS TPEA

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show abstract

“…Continued narrow overvoltage spikes between collector and emitter may open the gate-emitter resistance, while over-current of IGBT's collector may lead to gate-emitter resistance degradation [16]. Gate open-circuit failure can result in thermal runaway or high power dissipation [17]; however detailed research on the physical failure mechanism is still lacking. Moreover, modern IGBTs can work at 175°C junction temperature, which means the case temperature could reach 100°C or more, while most components in the driver cannot work normally at such high temperature.…”

Section: A Open-circuit Failure Mechanismsmentioning

confidence: 99%

Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview

Blaabjerg

Wang

et al. 2013

IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society

172

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Reliability is one of the key issues for the application of Insulated Gate Bipolar Transistors (IGBTs) in power electronic converters. Many efforts have been devoted to the reduction of IGBT wear out failure induced by accumulated degradation and catastrophic failure triggered by single-event overstress. The wear out failure under field operation could be mitigated by scheduled maintenances based on lifetime prediction and condition monitoring. However, the catastrophic failure is difficult to be predicted and thus may lead to serious consequence of power electronic converters. To obtain a better understanding of catastrophic failure of IGBTs, the state-of-theart research on their failure behaviors and failure mechanisms is presented in this paper. Moreover, various fault-tolerant design methods, to prevent converter level malfunctions in the event of IGBT failure, are also reviewed.

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“…The consequent number of converters required, when LVDC networks are combined with high numbers of EVs, further increases the pressure to improve converter efficiency as losses from thousands of converters accumulate, and underlines the imperative to meet strict harmonic standards to ensure continued grid stability [9–11]. To date, higher power applications have been met using two‐level insulated‐gate bipolar transistor (IGBT) inverters, however IGBT devices are now at the limit of performance.…”

Section: Introductionmentioning

confidence: 99%

MMC with parallel‐connected MOSFETs as an alternative to wide bandgap converters for LVDC distribution networks

Zhong¹,

Roscoe²,

Holliday³

et al. 2017

J. eng.

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MOSFET gate open failure analysis in power electronics

Cited by 13 publications

References 16 publications

A Review of Methods to Increase the Availability of Wind Turbine Generator Systems

A Review of Methods to Increase the Availability of Wind Turbine Generator Systems

Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview

MMC with parallel‐connected MOSFETs as an alternative to wide bandgap converters for LVDC distribution networks

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