In this paper we present a new hybrid finiteelement/component-modeling approach that can predict the pull-in and release behavior of MEMS switches orders of magnitude faster, and with significantly more behavioral detail, than traditional finite-element or formula-based approaches. The speed and detail allow exploration of the design space, guidance for design-ofexperiments, and insight into process variation that was previously infeasible.For instance, the existence of multiple pull-in or release states is very sensitive to device dimensions and is critical to achieving desired performance and yield. Understanding this sensitivity by varying all possible parameters in a traditional finiteelement approach could take weeks of simulation. Using the above methodology, the analysis can be done in minutes.The simulation methodology has been verified by comparing with measured Capacitance-Voltage (CV) relationship and Wyko white light interferometry displacement data for a commercial capacitive switch.
A new hybrid 3D finite-element/behavioral-modeling approach is presented that can be used to accurately predict the nonlinear dynamics (parametric resonance) in electrostatically driven 2D resonant MEMS scanning mirrors. We demonstrate new levels of accuracy and speed for thick SOI scanning mirrors with large scanning angles and validate the modeling approach against measurement on a previously fabricated scanning mirror. The modeling approach is fast and treats the design parameters as variables thus enabling rapid design iterations, automatic sensitivity and statistical yield analyses, and integration with system and circuit simulators for coupled MEMS-IC cosimulation.
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