Recently, organolead halide-based perovskites have emerged as promising materials for optoelectronic applications, particularly for photovoltaics, photodetectors, and lasing, with low cost and high performance. Meanwhile, nanoscale photodetectors have attracted tremendous attention toward realizing miniaturized optoelectronic systems, as they offer high sensitivity, ultrafast response, and the capability to detect beyond the diffraction limit. Here we report high-performance nanoscale-patterned perovskite photodetectors implemented by nanoimprint lithography (NIL). The spin-coated lead methylammonium triiodide perovskite shows improved crystallinity and optical properties after NIL. The nanoimprinted metal-semiconductor-metal photodetectors demonstrate significantly improved performance compared to the nonimprinted conventional thin-film devices. The effects of NIL pattern geometries on the optoelectronic characteristics were studied, and the nanograting pattern based photodetectors demonstrated the best performance, showing approximately 35 times improvement on responsivity and 7 times improvement on on/off ratio compared with the nonimprinted devices. The high performance of NIL-nanograting photodetectors likely results from high crystallinity and favored nanostructure morphology, which contribute to higher mobility, longer diffusion length, and better photon absorption. Our results have demonstrated that the NIL is a cost-effective method to fabricate high-performance perovskite nanoscale optoelectronic devices, which may be suitable for manufacturing of high-density perovskite nanophotodetector arrays and to provide integration with state-of-the-art electronic circuits.
The nucleation and growth of organic–inorganic hybrid perovskite films induced by the molar ratio of precursor components and their role in optoelectronic performance are investigated.
A study is reported comparing the electrical and optical properties of CdTe solar cells, prepared using CdS and CdSe buffer layers, to investigate defects in the bulk and interface, carrier transport, and recombination. Temperature dependent capacitance–voltage measurement and admittance spectroscopy were used to extract carrier concentration, resistivity, charge carrier mobility, and their temperature dependence. The authors identify the presence of two defect signatures corresponding to carrier freeze-out and the formation of a Schottky back-contact barrier. The back-contact barrier height (≈300 meV) extracted from the temperature dependent current density–voltage (JVT) experiment was confirmed by conventional admittance spectroscopy. The activation energies of mobility (resistivity) are 101.2 ± 2.5 meV (92.6 ± 2.3 meV) and 84.7 ± 2.7 meV (77.6 ± 4.5 meV) for CdS and CdSe buffer layers, respectively. Intensity dependent photoluminescence analysis demonstrates that the CdSe/CdTe device exhibits lower radiative efficiency than the CdS/CdTe device. This confirms the presence of higher defects in the CdSe/CdTe device corroborated by temperature dependent VOC analysis. The comparative electrical and optical analysis provides insight into improving the performance of CdTe solar cell device by selenization.
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