2019
DOI: 10.1016/j.tsf.2019.06.058
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Buffer/absorber interface recombination reduction and improvement of back-contact barrier height in CdTe solar cells

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Cited by 16 publications
(10 citation statements)
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“…Besides, recent research has shifted to replacing the traditional CdS window layer. MgxZn1−xO (MZO) is a promising alternative window layer material that has a higher bandgap and has contributed to >18% laboratory cell efficiencies [7,8]. Cadmium selenide (CdSe) is another option.…”
Section: Introductionmentioning
confidence: 99%
“…Besides, recent research has shifted to replacing the traditional CdS window layer. MgxZn1−xO (MZO) is a promising alternative window layer material that has a higher bandgap and has contributed to >18% laboratory cell efficiencies [7,8]. Cadmium selenide (CdSe) is another option.…”
Section: Introductionmentioning
confidence: 99%
“…The results show that incorporating Cu:NiO x into the PSC device improves its J-V behavior, giving a large area under the curve. The increase in the open-circuit voltage (V oc ) of the device with 0.1 M Cu:NiO x /PEDOT:PSS could result from the reduction in the potential loss at the HTL/perovskite interface due to the improved energy-level alignment, as shown by Paul et al [39,40] and Li et al [41] who adopted the band-bending technique to eliminate recombination at the interfaces of cadmium telluride (CdTe), thin-films and copper-indiumgallium-selenide (Cu(In,Ga)Se 2 ) solar cells with low and high gallium (Ga) compositions. The improved J sc of the Cu:NiO x /PEDOT:PSS could be attributed to the increase in the electrical conductivity of the Cu:NiO x , which provides room for more charges to be extracted from the perovskite absorber layer.…”
Section: Performance Of Fabricated Perovskite Solar Cellsmentioning
confidence: 89%
“…This results in a PEDOT:PSS/Cu:NiOx hole transport layer, enhancing hole collection and transport efficiency [7,31,[35][36][37][38]. Therefore, interface recombination is prevented [39][40][41].…”
Section: Introductionmentioning
confidence: 99%
“…[ 31 ] This small negative spike reduces the interface recombination between absorber/HTL layer because activation energy ( E a ) at the junction interface is equal to or nearly equal to the bandgap ( E g ) of the absorber layer, due to which bulk recombination mechanism is more dominant than interface recombination in this proposed CdTe design. [ 32,33 ] So, numerical analysis of this structure could be helpful for the development of CdTe photovoltaic cell.…”
Section: Introductionmentioning
confidence: 99%