Here, we report a facile hydrothermal synthesis method to prepare BiFeO3 nanowire-reduced graphene oxide (BFO-RGO) nanocomposites. The unique properties of 2-D reduced graphene oxide (RGO) and 1-D BiFeO3 nanowires (BFO) were exploited to design nanocomposites to obtain high performing microwave absorber materials. The composite with 97 wt % BFO and 3 wt % RGO exhibited minimum reflection loss value of −28.68 dB at 10.68 GHz along with the effective absorption bandwidth (≥ −10 dB) ranging from 9.6 to 11.7 GHz when the absorber thickness was only 1.55 mm. First-principles calculations based on density functional theory (DFT) of BFO, graphene, and BFO-RGO nanocomposites were performed to obtain information about their electronic structures to interpret their complex permittivity and its derived properties. To the best of our knowledge, this is the first time investigations on microwave absorption properties of the BiFeO3 nanowire and BFO-RGO nanocomposites have been reported, and this nanocomposite shows its potential to be used as a lightweight, high performing microwave absorber in the X-band region.

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Mixtures of Ce-doped rare-earth aluminum perovskites are drawing a significant amount of attention as potential scintillating devices. However, the synthesis of complex perovskite systems leads to many challenges. Designing the A-site cations with an equiatomic ratio allows for the stabilization of a single-crystal phase driven by an entropic regime. This work describes the synthesis of a highly epitaxial thin film of configurationally disordered rare-earth aluminum perovskite oxide (La 0.2 Lu 0.2 Y 0.2 Gd 0.2 Ce 0.2 )AlO 3 and characterizes the structural and optical properties. The thin films exhibit three equivalent epitaxial domains having an orthorhombic structure resulting from monoclinic distortion of the perovskite cubic cell. An excitation of 286.5 nm from Gd 3+ and energy transfer to Ce 3+ with 405 nm emission are observed, which represents the potential for high-energy conversion. These experimental results also offer the pathway to tunable optical properties of high-entropy rare-earth epitaxial perovskite films for a range of applications.

Here, in ionically conducting Na0.5Bi0.5TiO3 (NBT), we explore the link between growth parameters, stoichiometry and resistive switching behavior and show NBT to be a highly tunable system. We show that...

Perovskite offers a framework that boasts various functionalities and physical properties of interest such as ferroelectricity, magnetic orderings, multiferroicity, superconductivity, semiconductor, and optoelectronic properties owing to their rich compositional diversity. These properties are also uniquely tied to their crystal distortion which is directly affected by lattice strain. Therefore, many important properties of perovskite can be further tuned through strain engineering which can be accomplished by chemical doping or simply element substitution, interface engineering in epitaxial thin films, and special architectures such as nanocomposites. In this review, we focus on and highlight the structure–property relationships of perovskite metal oxide films and elucidate the principles to manipulate the functionalities through different modalities of strain engineering approaches.

Resistive switching and anisotropic optical properties have been investigated in two-phase HfO 2 :CeO 2 nanocomposite thin films of different HfO 2 :CeO 2 ratios of 3:1, 1:1, and 1:3 on single-crystalline SrTiO 3 (001) substrates. Vertically aligned nanocomposite (VAN) thin films with CeO 2 pillars embedded in a HfO 2 matrix have been obtained using a one-step pulsed laser deposition technique. By adjusting the molar ratio of HfO 2 and CeO 2 in the films, the resistive switching effect and the anisotropic dielectric response were tuned and correlated with the density of the conducting vertical-phase boundaries. It is shown that only HfO 2 :CeO 2 VAN films of 1:1 composition give rise to a forming-free switching system as they have clear vertical boundaries that guide oxygen vacancy channels. These films show strong promise for resistive switching memory devices.

In this paper, we have demonstrated the large-size free-standing single-crystal β-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown β-Ga2O3 epifilms on native substrates. The...

The prototypical chalcogenide perovskite, BaZrS3 (BZS), with its direct bandgap of 1.7–1.8 eV, high chemical stability, and strong light–matter interactions, has garnered significant interest over the past few years. So far, attempts to grow BaZrS3 films have been limited mainly to physical vapor deposition techniques. Here, we report the fabrication of BZS thin films via a facile aqueous solution route of polymer-assisted deposition (PAD), where the polymer-chelated cation precursor films were sulfurized in a mixed CS2 and Ar atmosphere. The formation of a single-phase polycrystalline BZS thin film at a processing temperature of 900 °C was confirmed by X-ray diffraction and Raman spectroscopy. The stoichiometry of the films was verified by Rutherford Backscattering spectrometry and energy-dispersive X-ray spectroscopy. The BZS films showed a photoluminescence peak at around 1.8 eV and exhibited a photogenerated current under light illumination at a wavelength of 530 nm. Temperature-dependent resistivity analysis revealed that the conduction of BaZrS3 films under the dark condition could be described by the Efros–Shklovskii variable range hopping model in the temperature range of 60–300 K, with an activation energy of about 44 meV.