High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

Cui, Yun; Webb, Matthew J.; Li, Weiwei; Wu, Rui; Xiao, Ming; Hellenbrand, Markus; Kuršumović, A.; Dou, Hongyi; Gao, Xu; Dhole, Samyak; Zhang, Di; Chen, Aiping; Shi, Jueli; Zhang, Kelvin H. L.; Wang, Haiyan; Jia, Q. X.; MacManus‐Driscoll, Judith L.

doi:10.1039/d1tc00202c

Cited by 10 publications

(12 citation statements)

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“…With memristors, complex, elaborate large‐scale mathematical computations can be performed quickly and efficiently, as well as a way to solve bottlenecks of von Neumann computer architecture. [ 10–12 ]…”

Section: Introductionmentioning

confidence: 99%

Flexible ZnO Nanosheet‐Based Artificial Synapses Prepared by Low‐Temperature Process for High Recognition Accuracy Neuromorphic Computing

Wang

Bian

et al. 2022

Adv Funct Materials

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In neuromorphic computing networks, a flexible synaptic memristor with high recognition accuracy is highly desired. In this study, ZnO nanosheets (ZnO NS) embedded within a polymethyl methacrylate host material are used as the intermediate layer to prepare flexible synaptic memristor at a low-temperature of 80 °C. The device shows excellent switching characteristics with low SET/RESET voltages (−0.4 V/0.4 V) and stable retention characteristic (10 4 s). By modulating the conductance continuously, the flexible synaptic memristor simulates typical synaptic plasticities, including excitation post-synaptic current, paired-pulse facilitation, and spike-timing dependent plasticity. Especially, the neuromorphic system built from flexible ZnO NS-based memristors achieves a high recognition accuracy up to 97.7% for handwriting digit. Under the influence of 5% Uniform noise and 5% Gaussian noise, recognition accuracies are maintained at 94.6% and 93.7%, respectively. These properties are well maintained even when bending 1000 times at a radius of 5 mm. The flexible ZnO NS-based memristor shows great prospects in wearable devices and neural morphology calculation.

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Section: Introductionmentioning

confidence: 99%

Flexible ZnO Nanosheet‐Based Artificial Synapses Prepared by Low‐Temperature Process for High Recognition Accuracy Neuromorphic Computing

Wang

Bian

et al. 2022

Adv Funct Materials

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“…There is much current interest in resistive switching (RS) phenomena in thin film devices for memristive applications. [1][2][3][4][5][6] An essential feature of these devices appears to be the creation of nano-dimensional conducting filaments on the application of a small voltage during a pre-forming stage. These filaments break and reform during subsequent switching.…”

Section: Introductionmentioning

confidence: 99%

“…15,16 RS has also been demonstrated in several other binary metal oxides including NiO, TiO 2 , ZrO 2 , Al 2 O 3 , and Nb 2 O 5, or ternary metal oxides such as Cr-doped SrTiO 3 and Na 0.5 Bi 0.5 TiO 3 . 6,17,18 A common characteristic is that RS occurs in nanometerthick films and devices. The mechanism of RS is often attributed to the electromigration of either oxygen vacancies or metal cations such as Cu or Ag.…”

Section: Introductionmentioning

confidence: 99%

“…Thin films of pure and doped HfO 2 have received much attention recently because of their ferroelectric and resistive‐switching behavior 15,16 . RS has also been demonstrated in several other binary metal oxides including NiO, TiO 2 , ZrO 2 , Al 2 O 3 , and Nb 2 O 5, or ternary metal oxides such as Cr‐doped SrTiO 3 and Na 0.5 Bi 0.5 TiO 3 6,17,18 . A common characteristic is that RS occurs in nanometer‐thick films and devices.…”

Section: Introductionmentioning

confidence: 99%

“…An essential feature of these devices appears to be the creation of nano‐dimensional conducting filaments on the application of a small voltage during a pre‐forming stage. These filaments break and reform during subsequent switching 1–6 . Resistive switchings may also occur by other mechanisms, including the well‐known temperature‐induced, metal‐insulator Verwey transition in magnetite and VO 2 that is associated with structural changes at a crystallographic phase transition 7–9 …”

Section: Introductionmentioning

confidence: 99%

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Resistive‐switching in yttria‐stabilized hafnia ceramics

2022

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Yttria-stabilized hafnia ceramics are high-temperature oxide ion conductors that lose a small amount of oxygen, both at high temperatures and on the application of a small dc bias. At zero applied bias, a small amount of p-type conductivity is present. This increases with low bias and is attributed to reactions initiated at the positive electrode/ceramic interface. With a further increase in bias, ntype conductivity is initiated at the negative electrode/ceramic interface. After a short time-lapse, the overall conductivity increases rapidly by 1.5-3 orders of magnitude and is reversible, with hysteresis, on subsequent removal of the bias. Switching has been observed over the range 457-531 • C and is sensitive to both temperature and oxygen partial pressure in the surrounding atmosphere. This is the first example of low field, resistive switching in bulk hafnia ceramics, in contrast to most examples of resistive switching which are observed in nanometre-thick devices using similarly applied voltages.

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Engineering of Grain Boundaries in CeO₂ Enabling Tailorable Resistive Switching Properties

Dou

Hellenbrand

Xiao

et al. 2023

Adv Elect Materials

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With their recent advances in memory and neuromorphic computing applications, resistive random-access memory (RRAM) emerges as one of the most promising electronic devices to change computational data management. The neuromorphic computing enabled by RRAMs provides viable solution to overcoming the limitations of the von-Neumann bottleneck for next-generation memory and computing applications. [1] As one type of RRAM, valence change memory made of oxides has numerous merits including large ON/OFF ratio, excellent endurance/retention, high switching speed, and simple fabrication. [2][3][4] Resistive switching (RS) in valence change memory is often realized by the change of electronic states of cations related to oxygen vacancies. Over the years, RS has been widely reported in many simple binary oxides (TiO 2 , [1,[5][6][7] HfO 2 , [8][9][10] CeO 2 , [11][12][13] and SiO 2 , [14,15] ) and ternary oxides Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain boundaries. In this work, the impact of engineering large numbers of grain boundaries on resistive switching mechanisms and performances is investigated. Three different grain morphologies, that is, "random network," "columnar scaffold," and "island-like," are realized in CeO 2 thin films. The devices with the three grain morphologies demonstrate vastly different resistive switching behaviors. The best overall resistive switching performance is shown in the devices with "columnar scaffold" morphology, where the vertical grain boundaries extending through the film facilitate the generation of oxygen vacancies as well as their migration under external bias. The observation of both interfacial and filamentary switching modes only in the devices with a "columnar scaffold" morphology further confirms the contribution from grain boundaries. In contrast, the "random network" or "island-like" structures result in excessive or insufficient oxygen vacancy concentration migration paths. The research provides design guidelines for grain boundary engineering of oxide-based resistive switching materials to tune the resistive switching performances for memory and neuromorphic computing applications.

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High performance, electroforming-free, thin film memristors using ionic Na_0.5Bi_0.5TiO₃

Abstract: Here, in ionically conducting Na0.5Bi0.5TiO3 (NBT), we explore the link between growth parameters, stoichiometry and resistive switching behavior and show NBT to be a highly tunable system. We show that...

Cited by 10 publications

References 75 publications

Flexible ZnO Nanosheet‐Based Artificial Synapses Prepared by Low‐Temperature Process for High Recognition Accuracy Neuromorphic Computing

Flexible ZnO Nanosheet‐Based Artificial Synapses Prepared by Low‐Temperature Process for High Recognition Accuracy Neuromorphic Computing

Resistive‐switching in yttria‐stabilized hafnia ceramics

Engineering of Grain Boundaries in CeO₂ Enabling Tailorable Resistive Switching Properties

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High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

Abstract: Here, in ionically conducting Na0.5Bi0.5TiO3 (NBT), we explore the link between growth parameters, stoichiometry and resistive switching behavior and show NBT to be a highly tunable system. We show that...

Cited by 10 publications

References 75 publications

Flexible ZnO Nanosheet‐Based Artificial Synapses Prepared by Low‐Temperature Process for High Recognition Accuracy Neuromorphic Computing

Flexible ZnO Nanosheet‐Based Artificial Synapses Prepared by Low‐Temperature Process for High Recognition Accuracy Neuromorphic Computing

Resistive‐switching in yttria‐stabilized hafnia ceramics

Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties

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High performance, electroforming-free, thin film memristors using ionic Na_0.5Bi_0.5TiO₃

Engineering of Grain Boundaries in CeO₂ Enabling Tailorable Resistive Switching Properties