Large-size free-standing single-crystal β-Ga₂O₃ membranes fabricated by hydrogen implantation and lift-off

Abstract

In this paper, we have demonstrated the large-size free-standing single-crystal β-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown β-Ga2O3 epifilms on native substrates. The...

Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes

“…[ 1 ] Importantly, these NMs are compatible with the traditional semiconductor manufacture approach for fabricating various heterogeneously integrated and flexible electronic devices, [ 2–4 ] including the seamless integration of semiconductor NMs with the low‐cost, complementary‐metal‐oxide‐semiconductor‐compatible silicon (Si) substrates. Until now, several applications of transferrable monocrystalline NMs based on Si, [ 4–20 ] germanium (Ge), [ 4,21 ] gallium arsenide (GaAs)/aluminum gallium arsenide (AlGaAs), [ 4,22–26 ] gallium nitride (GaN)/aluminum gallium nitride (AlGaN), [ 27–30 ] silicon carbide (SiC), [ 31 ] gallium oxide (Ga 2 O 3 ), [ 32–35 ] etc. have been reported during the last few years.…”

“…Potentially, the novel approach opens a viable path for the development of the AlN-based heterogeneous integration and future novel electronics and optoelectronics. arsenide (AlGaAs), [4,[22][23][24][25][26] gallium nitride (GaN)/aluminum gallium nitride (AlGaN), [27][28][29][30] silicon carbide (SiC), [31] gallium oxide (Ga 2 O 3 ), [32][33][34][35] etc. have been reported during the last few years.…”

High‐Performance Solar Blind UV Photodetectors Based on Single‐Crystal Si/β‐Ga2O3 p‐n Heterojunction

“…Yixiong Zheng, Md Nazmul Hasan, and Jung-Hun Seo* DOI: 10.1002/admt.202100254 tion. [7][8][9] Among these UWBG semiconductors, beta phase Ga 2 O 3 (β-Ga 2 O 3 ) has attracted intensive attention as a promising candidate for DUV PDs due to its desirable material properties such as a bandgap of 4.9 eV, excellent mechanical and thermal stability, and availability of large substrate up to 2 inch [10][11][12][13][14] . However, two imperative issues in β-Ga 2 O 3 are: (i) absence of p-type dopant and (ii) unbalanced electron and hole mobility.…”

“…[ 5 , 6 ] On the other hand, ultra‐wide bandgap (UWBG) semiconductors, such as aluminum gallium nitride (AlGaN), gallium oxide (Ga 2 O 3 ), and diamond, allow us to realize solar‐blind photodetection without adding any additional optical parts by directly using an electron‐hole pair by photon generation. [ 7–9 ] Among these UWBG semiconductors, beta phase Ga 2 O 3 (β‐Ga 2 O 3 ) has attracted intensive attention as a promising candidate for DUV PDs due to its desirable material properties such as a bandgap of 4.9 eV, excellent mechanical and thermal stability, and availability of large substrate up to 2 inch [ 10–14 ] . However, two imperative issues in β‐Ga 2 O 3 are: (i) absence of p‐type dopant and (ii) unbalanced electron and hole mobility.…”

Transient characteristics of β-Ga2O3 nanomembrane Schottky barrier diodes on various substrates

“…For example, Zheng et al and Cheng et al used a single-crystal diamond substrate as a heat dissipator to create the β-Ga 2 O 3 NM/diamond structure and successfully characterized the thermal conductivity of β-Ga 2 O 3 NM and thermal boundary conductance at the β-Ga 2 O 3 NM/diamond interface [8,28,29]. Cheng et al and Zheng et al also formed the β-Ga 2 O 3 NM/SiC structure to realize a similar cooling effect [30,31].…”