Graphene Oxide (GO) was chemically synthesized from Natural Flake Graphite (NFG). The GO was chemically reduced to Reduced Graphene Oxide (RGO) using hydrazine monohydrate. Thin films of GO and RGO were also deposited on sodalime glass substrate using spray pyrolysis technique (SPT). The samples were characterized using Fourier Transform Infrared (FTIR) spectroscopy, Scanning Electron Microscopy (SEM) with Energy Dispersive X-Ray (EDS) facility attached to it, UV-Visible Spectrometry and Four-Point probe. The FTIR spectra showed the addition of oxygen functionality groups in GO while such groups was drastically reduced in RGO. SEM micrograph of GO thin film showed a porous sponge-like structure while the micrograph of RGO thin film showed evenly distributed and well connected graphene structure. The EDX spectrum of RGO showed that there was decrease in oxygen content and increase in carbon content of RGO when compared to GO. The optical analysis of the GO and RGO thin films gave a direct energy bandgap of 2.7 eV and 2.2 eV respectively. The value of sheet resistance of GO and RGO films was determined to be 22.9 × 10 6 Ω/sq and 4.95 × 10 6 Ω/sq respectively.
Abstract:A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm 3 /min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1. 17 × 10 Ω/□ and 10.40 Ω were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.
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