Abstract:Abstract:A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm 3 /min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are pres… Show more
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