Optical, Structural and Electrical Properties of Aluminum Doped Zinc Oxide Thin Films by MOCVD Technique

Ayinde, Sabur Abiodun; Fasakin, Oladepo; Olofinjana, Bolutife; Adedeji, Adetayo; Oyedare, P. O.; Eleruja, Marcus Adebola; Ajayi, E. O. B.

doi:10.1007/s11664-019-07123-8

Cited by 6 publications

(4 citation statements)

References 33 publications

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“…where 'B' is a constant, h is Plank's constant, ν is the photon frequency, α is the absorption coefficient and E g is the optical band gap. The absorption coefficient α was estimated using the film thickness d and the transmittance T [8]:…”

Section: Uv-vis Spectroscopy-optical Characterizationmentioning

confidence: 99%

“…where R represents the film reflectance, k is the calculated extinction coefficient, λ is the wavelength of the incident photon and α is the absorption coefficient, estimated from Equation (8). The comparison of the extinction coefficient of ZnO and Mg-doped ZnO films is given in Figure 13 for annealing temperatures from 300 to 600 • C. The spectral range is 300-1000 nm.…”

Section: Uv-vis Spectroscopy-optical Characterizationmentioning

confidence: 99%

“…Doped ZnO materials expand their applicability and multifunctionality [7]. Therefore, it is essential to dope ZnO with suitable elements and appropriate doping concentrations in order to obtain the desired enhanced optical and electrical behavior [7,8] or to improve specific properties, such as magnetic properties, photocatalytic performance, etc. [9].…”

Section: Introductionmentioning

confidence: 99%

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Deposition of Sol–Gel ZnO:Mg Films and Investigation of Their Structural and Optical Properties

et al. 2022

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This work presents a facile sol–gel method for the deposition of ZnO and ZnO:Mg films. The films are spin coated on silicon and quartz substrates. The impact of magnesium concentrations (0, 0.5, 1, 2 and 3 wt%) and post-annealing treatments (300–600 °C) on the film’s structural, vibrational and optical properties is investigated. Undoped ZnO films crystallize in the wurtzite phase, with crystallite sizes ranging from 9.1 nm (300 °C) to 29.7 nm (600 °C). Mg doping deteriorates the film crystallization and shifting of 002 peak towards higher diffraction angles is observed, indicating the successful incorporation of Mg into the ZnO matrix. ZnO:Mg films (2 wt%) possess the smallest crystallite size, ranging from 6.2 nm (300 °C) to 25.2 nm (600 °C). The highest Mg concentration (3 wt%) results into a segregation of the MgO phase. Lattice constants, texture coefficients and Zn–O bond lengths are discussed. The diminution of the c lattice parameter is related to the replacement of Zn2+ by Mg2+ in the ZnO host lattice. The vibrational properties are studied by Fourier transform infrared (FTIR) spectroscopy. IR lines related to Mg–O bonds are found for ZnO:Mg films with dopant concentrations of 2 and 3 wt%. The optical characterization showed that the transmittance of ZnO:Mg thin films increased from 74.5% (undoped ZnO) to about 89.1% and the optical band gap energy from 3.24 to 3.56 eV. Mg doping leads to a higher refractive index compared to undoped ZnO films. The FESEM (field emission scanning electron microscopy) technique is used for observation of the surface morphology modification of ZnO:Mg films. The doped ZnO films possess a smoother grained surface structure, opposite to the wrinkle-type morphology of undoped sol–gel ZnO films. The smoother surface leads to improved transparency of ZnO:Mg films.

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Section: Uv-vis Spectroscopy-optical Characterizationmentioning

confidence: 99%

Section: Uv-vis Spectroscopy-optical Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Deposition of Sol–Gel ZnO:Mg Films and Investigation of Their Structural and Optical Properties

et al. 2022

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“…AZO film can be grown through sol-gel method [19], magnetron sputtering [20], metal-organic chemical vapor deposition [21], pulsed-laser deposition [22] and atomic layer deposition (ALD) [23]. Among these, sol-gel is a conventional, simple and low-cost method suitable for depositing AZO films on flat substrates with relatively low quality [24].…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of Al-doped ZnO nanomembrane with in situ monitoring

Wang,

Gu,

Zhao

et al. 2024

Nanotechnology

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Due to shortcomings such as poor homogeneity of Al doping, precisely controlling the thickness, inability to conformally deposit on high aspect ratio devices and high pinhole rate, the applications of Al-doped ZnO (AZO) nanomembrane in integrated optoelectronic devices are remarkably influenced. Here, we report in situ monitoring during the atomic layer deposition (ALD) of AZO nanomembrane by using an integrated spectroscopic ellipsometer. AZO nanomembranes with different compositions were deposited with real-time and precise atomic level monitoring of the deposition process. We specifically investigate the half reaction and thickness evolution during the ALD processes and the influence of the chamber temperature is also disclosed. Structural characterizations demonstrate that the obtained AZO nanomembranes without any post-treatment are uniform, dense and pinhole-free. The transmittances of the nanomembranes in visible range are > 94%, and the optimal conductivity can reach up to 1210 S/cm. The output of current research may pave the way for AZO nanomembrane becoming promising in integrated optoelectronic devices.

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Synthesis and characterization of Al-doped ZnO and Al/F co-doped ZnO thin films prepared by atomic layer deposition

Starowicz

Ziȩba

Wlazło

et al. 2023

Materials Science and Engineering: B

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Optical, Structural and Electrical Properties of Aluminum Doped Zinc Oxide Thin Films by MOCVD Technique

Cited by 6 publications

References 33 publications

Deposition of Sol–Gel ZnO:Mg Films and Investigation of Their Structural and Optical Properties

Deposition of Sol–Gel ZnO:Mg Films and Investigation of Their Structural and Optical Properties

Atomic layer deposition of Al-doped ZnO nanomembrane with in situ monitoring

Synthesis and characterization of Al-doped ZnO and Al/F co-doped ZnO thin films prepared by atomic layer deposition

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