Synthesis and characterization of Al-doped ZnO and Al/F co-doped ZnO thin films prepared by atomic layer deposition

Starowicz, Z.; Ziȩba, A.; Wlazło, Mateusz; Kołodziej, Grzegorz; Szczerba, M.J.; Putynkowski, Grzegorz; Socha, Robert P.

doi:10.1016/j.mseb.2023.116405

Cited by 10 publications

(6 citation statements)

References 62 publications

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Section: Materials Advances Accepted Manuscriptmentioning

confidence: 99%

“…In these studies, optimal Al doping in a concentration range similar to that of the current study maximizes the conductivity of AZO nanostructures. [52][53][54][55][56][57] The observed changes in the electrical performance of the infiltration synthesized AZO nanowires can be attributed to the changes in the chemical state that occur due to differences in the TMA exposure time. To further understand these changes, XPS was carried out over AZO nanopatterns synthesized with different TMA exposure durations (Fig.…”

Section: Materials Advances Papermentioning

confidence: 99%

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Effects of alumina priming on the electrical properties of ZnO nanostructures derived from vapor-phase infiltration into self-assembled block copolymer thin films

Lee,

Subramanian,

Kisslinger

et al. 2024

Mater. Adv.

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Section: Materials Advances Accepted Manuscriptmentioning

confidence: 99%

Section: Materials Advances Papermentioning

confidence: 99%

Effects of alumina priming on the electrical properties of ZnO nanostructures derived from vapor-phase infiltration into self-assembled block copolymer thin films

Lee,

Subramanian,

Kisslinger

et al. 2024

Mater. Adv.

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“…Therefore, in this work were using two economically attractive Zinc-Oxide NanoRods (ZnO NR) production based on Atomic Layer Deposition (ALD) and subsequent chemical bath 59,60 . This technique allows for fabrication of oxide materials upon very large surfaces significantly reducing the fabrication costs [61][62][63][64][65] .…”

Section: Piezoelectric-based Light Conversionmentioning

confidence: 99%

ZnO nanorods as a piezoelectric energy harvester from light induced flexions

Haras¹,

Wlazło²,

Andrysiewicz³

et al. 2023

Smart Materials for Opto-Electronic Applications

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Rapid growth is promoting the Internet of Things (IoT) to become one of the main branches of the semiconductor industry. Surprisingly, the IoT growth would have been even faster if economically attractive and reliable alternatives for batteries and wires had been available. Providing power supply to the IoT nodes is challenging regarding their: (i) quantity (close to 8x the human population), (ii) harsh operation environments, (iii) size (typical footprint much smaller than mm2) and (iv) hard-to-reach locations. Modern IoT node requires very small energy (less than 100μJ/cycle) to operate. Wire supply of energy is expensive and uncomfortable while using a battery requires periodic replacements/maintenance and produces tons of toxic waste. Energy Harvesting (EH) could be a solution to overcome the IoT supply difficulties offering self-supplied nodes enabling further IoT market growth. EH converts natural or waste energies (vibrations, heat losses, light, etc.) into useful energy. We present an innovative two-step conversion harvester capable of transforming light into electricity via the PieZoelectric (PZ) effect. Our approach uses a Photo- Mobile Polymer (PMP) integrated with the PZ material. PMP serves as light-to-movement transducer and PZ converts the light-induced PMP flexions into voltage. As a PZ material, a nanostructured ZnO nanorods were used as their fabrication is cheap and ready-to-use at industrial scale. ZnO performance characterization in a dedicated flexions simulator revealed energy as high as 80nJ during 55sec bending runs. This result encourages further PMP and ZnO optimization enabling extension of piezoelectrics onto light conversion.

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“…Above all, ALD is also used to grow thin films of metal oxides (MO) [11], e.g., ZnO [12][13][14][15][16], Al 2 O 3 [17,18], and TiO 2 [19,20]. Zinc oxide is a transparent oxide semiconductor with a direct band gap Eg = 3.4 eV [21].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of the Electronic Properties of Atomic Layer Deposition-Grown Ge-Doped Zinc Oxide Thin Films at Elevated Temperatures

Knura,

Skibińska,

Sahayaraj

et al. 2024

Electronics

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The aim of this study was to determine the electronic properties of as-deposited ALD-grown Ge-doped zinc oxide thin films annealed at 523 K or 673 K. SEM, EDS, and ellipsometry measurements confirmed that the Ge-doped zinc oxide films with a thickness of around 100 nm and uniform composition were successfully obtained. GI-XRD measurements did not reveal phases other than the expected Wurtzite structure of the ZnO. The electronic properties, i.e., conductivity, charge carrier concentration, and mobility of the films, were evaluated using Hall effect measurements and explained based on corresponding XPS measurements. This work supports the theory that oxygen vacancies act as electron donors and contribute to the intrinsic n-type conductivity of ZnO. Also, it is shown that the effect of oxygen vacancies on the electronic properties of the material is stronger than the effect introduced by Ge doping.

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Synthesis and characterization of Al-doped ZnO and Al/F co-doped ZnO thin films prepared by atomic layer deposition

Cited by 10 publications

References 62 publications

Effects of alumina priming on the electrical properties of ZnO nanostructures derived from vapor-phase infiltration into self-assembled block copolymer thin films

Effects of alumina priming on the electrical properties of ZnO nanostructures derived from vapor-phase infiltration into self-assembled block copolymer thin films

ZnO nanorods as a piezoelectric energy harvester from light induced flexions

Evaluation of the Electronic Properties of Atomic Layer Deposition-Grown Ge-Doped Zinc Oxide Thin Films at Elevated Temperatures

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