Single-crystalline gallium phosphide (GaP) surfaces have been functionalized with alkyl groups via a sequential Cl-activation, Grignard reaction process. X-ray photoelectron (XP) spectra of freshly etched GaP(111)A surfaces demonstrated reproducible signals for surficial Cl after treatment with PCl(5) in chlorobenzene. The measured Cl content consistently corresponded to approximately a monolayer of coverage on GaP(111)A. In contrast, GaP(111)B surfaces treated with the same PCl(5) solution under the same conditions exhibited macroscale roughening and yielded XP spectra that showed irreproducible Cl surface content often below the limit of detection of the spectrometer. The Cl-activated GaP(111)A surfaces were reactive toward alkyl Grignard reagents. Sessile contact angle measurements between water and GaP(111)A after various levels of treatment showed that GaP(111)A surfaces became significantly more hydrophobic following reaction with either CH(3)MgCl or C(18)H(37)MgCl. GaP(111)A surfaces reacted with C(18)H(37)MgCl demonstrated wetting properties consistent with surfaces modified with a dense layer of long alkyl chains. High-resolution C 1s XP spectra indicated that the carbonaceous species at GaP(111)A surfaces treated with Grignard reagents could not be ascribed solely to adventitious carbon. A shoulder in the C 1s XP spectra occurred at slightly lower binding energies for these samples, commensurate with the formation of Ga-C bonds. High-resolution P 2p XP spectra taken at various times during prolonged direct exposure to ambient laboratory air indicated that the resistance of GaP(111)A to surface oxidation was greatly enhanced after surface modification with alkyl groups. GaP(111)A samples that had been functionalized with C(18)H(37)- groups exhibited less than 0.1 nm of surface oxide after 7 weeks of continuous exposure to ambient air. GaP(111)A surfaces terminated with C(18)H(37)- groups were also used as platforms in Schottky heterojunctions with Hg. In comparison to freshly etched GaP(111)A, the alkyl-terminated GaP(111)A samples yielded current-voltage responses that were in accord with metal-insulator-semiconductor devices and indicated that this reaction strategy could be used to alter rates of heterogeneous charge transfer controllably. The wet chemical surface functionalization strategy described herein does not involve thiol/sulfide chemistry or gas-phase pretreatments and represents a new synthetic methodology for controlling the interfacial properties of GaP and related Ga-based III-V semiconductors.

A heterogeneous dihydrogen (H2) production system has been attained by simply soaking electrodes made from electro-deposited graphene on FTO plated glass in solutions of a cobalt bis(dithiolate) compound. The resulting electrodes are active in weakly acidic aqueous solutions (pH > 3), have relatively low overpotentials (0.37 V versus platinum), show high catalytic rates (TOF > 1000 s(-1)), and are resistant to degradation by dioxygen.

The photoelectrochemical properties of p-type gallium phosphide (GaP) (111)A electrodes before and after a two-step chlorination/Grignard reaction sequence have been assessed. Electrochemical impedance spectroscopy indicated both a change in the flat-band potential in water and decreased sensitivity of the band edge energetics toward pH for GaP(111)A surfaces following modification. Separate stability tests were performed to gauge the susceptibilities of unmodified and CH 3 -terminated p-GaP(111)A photoelectrodes toward reductive degradation under illumination. The steady-state photoelectrochemical results showed modification of GaP(111)A with −CH 3 groups significantly enhanced p-GaP stability. Separately, sub-bandgap photocurrent measurements were collected to assess relative changes in surface states acting as recombination centers. In the absence of any dye, the sub-bandgap photocurrent from trapping/detrapping of charge carriers in surface states was higher for unmodified p-GaP photoelectrodes than for CH 3 -terminated p-GaP(111)A. Further, sensitized photocurrents of p-GaP photoelectrodes with Brilliant Green were systematically higher after modification with −CH 3 groups, indicating a deactivation of a surface recombination pathway after surface modification. Collectively, this work illustrates a rational chemical strategy to modify and augment the pertinent interfacial properties of p-GaP photocathodes in an aqueous photoelectrochemical system.

Crystalline gallium arsenide (GaAs) (111)A and gallium nitride (GaN) (0001) surfaces have been functionalized with alkyl groups via a sequential wet chemical chlorine activation, Grignard reaction process. For GaAs(111)A, etching in HCl in diethyl ether effected both oxide removal and surface-bound Cl. X-ray photoelectron (XP) spectra demonstrated selective surface chlorination after exposure to 2 M HCl in diethyl ether for freshly etched GaAs(111)A but not GaAs(111)B surfaces. GaN(0001) surfaces exposed to PCl(5) in chlorobenzene showed reproducible XP spectroscopic evidence for Cl-termination. The Cl-activated GaAs(111)A and GaN(0001) surfaces were both reactive toward alkyl Grignard reagents, with pronounced decreases in detectable Cl signal as measured by XP spectroscopy. Sessile contact angle measurements between water and GaAs(111)A interfaces after various levels of treatment showed that GaAs(111)A surfaces became significantly more hydrophobic following reaction with C(n)H(2n-1)MgCl (n = 1, 2, 4, 8, 14, 18). High-resolution As 3d XP spectra taken at various times during prolonged direct exposure to ambient lab air indicated that the resistance of GaAs(111)A to surface oxidation was greatly enhanced after reaction with Grignard reagents. GaAs(111)A surfaces terminated with C(18)H(37) groups were also used in Schottky heterojunctions with Hg. These heterojunctions exhibited better stability over repeated cycling than heterojunctions based on GaAs(111)A modified with C(18)H(37)S groups. Raman spectra were separately collected that suggested electronic passivation by surficial Ga-C bonds at GaAs(111)A. Specifically, GaAs(111)A surfaces reacted with alkyl Grignard reagents exhibited Raman signatures comparable to those of samples treated with 10% Na(2)S in tert-butanol. For GaN(0001), high-resolution C 1s spectra exhibited the characteristic low binding energy shoulder demonstrative of surface Ga-C bonds following reaction with CH(3)MgCl. In addition, 4-fluorophenyl groups were attached and detected after reaction with C(6)H(4)FMgBr, further confirming the susceptibility of Cl-terminated GaN(0001) to surface alkylation. However, the measured hydrophobicities of alkyl-terminated GaAs(111)A and GaN(0001) were markedly distinct, indicating differences in the resultant surface layers. The results presented here, in conjunction with previous studies on GaP, show that atop Ga atoms at these crystallographically related surfaces can be deliberately functionalized and protected through Ga-C surface bonds that do not involve thiol/sulfide chemistry or gas-phase pretreatments.

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The functionalization of single crystalline gallium phosphide (GaP) (111)A surfaces with allyl groups has been performed using a sequential chlorine-activation/Grignard reaction process. Increased hydrophobicity following reaction of a GaP(111)A surface with C3H5MgCl was observed through water contact angle measurements. Infrared spectra of GaP(111)A samples after reaction with C3H5MgCl showed the asymmetric C═C and C═C-H modes diagnostic of surface-attached allyl groups. The stability of allyl-terminated GaP(111)A surfaces under ambient and aqueous conditions was investigated. XP spectra of allyl-terminated GaP(111)A highlighted a significant resistance against interfacial oxidation both in air and in water relative to the native interface. Electrochemical impedance spectroscopy indicated a change in the flat-band potential of allyl-terminated GaP(111)A electrodes immersed in water relative to native GaP(111)A surfaces. Further, the flat-band potentials for allyl-terminated electrodes were insensitive to changes in solution pH. The utility of surface-bound allyl groups for covalent secondary functionalization of GaP(111)A interfaces was assessed through three separate reactions: Heck cross-coupling metathesis, hydrosilylation, and electrophilic addition of bromine reactions. Addition of aryl groups across the olefins on allyl-terminated GaP(111)A via Heck cross coupling was performed and confirmed through high-resolution F 1s and C 1s XP spectra and IR spectra. Control experiments with GaP(111)A surfaces functionalized with short alkanes indicated no evidence for metathesis. Hydrosilylation reactions were separately performed. Si 2s XP spectra, in conjunction with infrared spectra, similarly showed secondary evidence of surface functionalization for allyl-terminated GaP(111)A but not for CH3-terminated GaP(111)A surfaces. Similar analyses showed electrophilic addition of Br2 across the terminal olefin on an allyl-terminated GaP(111)A surface after exposure to dilute Br2 solutions in CH2Cl2. The work presented herein establishes a set of secondary reaction strategies utilizing allyl-terminated surfaces to modify chemically protected GaP surfaces.

Nitrogen alloyed gallium phosphide (GaP1–x N x ) nanowires have been prepared by annealing gallium phosphide (GaP) nanowires in flowing NH3(g) at 750 °C. X-ray diffraction patterns and electron microscopy showed that changes in the annealing conditions afforded controlled alloying of N without effecting a complete conversion to gallium nitride (GaN). Raman measurements on nanowire films and individual nanowires highlighted intense new signatures, consistent with symmetry reduction from N incorporation in the zincblende lattice. The resultant optical properties and photoresponse of the GaP1–x N x nanowire films were investigated by wavelength-dependent diffuse reflectance and photoelectrochemical measurements, respectively. Diffuse reflectance measurements showed progressively lower reflectivity of visible light for nanowire films annealed in increasingly higher levels of NH3(g), indicating an increased light absorption. Corresponding photoelectrochemical measurements of the GaP1–x N x nanowires revealed an increased quantum efficiency, relative to GaP, for energy conversion of light with wavelengths longer than 545 nm. The presented data set thus identifies a methodology for improving the solar energy conversion properties of GaP nanowire film photoelectrodes for visible light.

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