The solid-state reaction between Ni and In 0.53 Ga 0.47 As on an InP substrate was studied by X-ray diffraction (XRD) and scanning transmission electron microscopy-energy-dispersive X-ray spectroscopy techniques. Due to the monocrystalline structural aspect of the so-formed intermetallic, it was necessary to measure by XRD a full 3D reciprocal space mapping in order to have a complete overlook over the crystalline structure and texture of the intermetallic. The formation of the intermetallic was studied upon several different Rapid Thermal Annealings on the as-deposited samples. Pole figures analysis shows that the intermetallic features a hexagonal structure (P6 3 /mmc) with an NiAs-type (B8) structure. Although only one hexagonal structure is highlighted, the intermetallic exhibits two different domains characterized by different azimuthal orientations, axiotaxial relationship, and lattice parameters. The intermetallic phases seem to present a rather wide range of stoichiometry according to annealing temperature. The texture, structure, and stoichiometry of the intermetallic are discussed along with the evolution of lattice parameters of the Ni-InGaAs phase.
International audienceThe composition and morphology of the product phase after the reaction of Ni thin film with In0.53Ga0.47As substrate at 350 degrees C were investigated by atom probe tomography, X-ray diffraction, and scanning electron microscopy. Results show the formation of a unique Ni-3(In0.53Ga0.47) As phase with a low concentration in-depth gradient of Ni and the decoration of the grain boundaries by In atoms. These analyses indicate that Ni is the main diffusing specie during the growth of Ni-3(In0.53Ga0.47) As phase. The volume of the product phase is higher than the volume of the consumed Ni film as expected for the formation of Ni-3(In0.53Ga0.47) As phase. Published by AIP Publishing
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