Reaction of Ni film with In0.53Ga0.47As: Phase formation and texture

Zhiou, S.; Nguyen-Thanh, Tra; Rodriguez, Philippe; Nemouchi, F.; Rapenne, Laëtitia; Blanc, Nils; Boudet, Nathalie; Gergaud, P.

doi:10.1063/1.4963716

Cited by 12 publications

(9 citation statements)

References 25 publications

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“…Note that these two in-plane directions have been reported for a very different system, i.e. Ni/In 0.53 Ga 0.47 As (Group B domains) (Zhiou et al, 2016). The poles at = 55 might be related to the projection of the (111) planes of the TiN capping layer on the (001) plane.…”

Section: Nature Of the Ni-rich Phasementioning

confidence: 86%

Ni/GeSn solid-state reaction monitored by combined X-ray diffraction analyses: focus on the Ni-rich phase

et al. 2018

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The Ni/Ge 0.9 Sn 0.1 solid-state reaction was monitored by combining in situ X-ray diffraction, in-plane reciprocal space map measurements and in-plane pole figures. A sequential growth was shown, in which the first phase formed was an Ni-rich phase. Then, at 518 K, the mono-stanogermanide phase Ni(Ge 0.9 Sn 0.1 ) was observed. This phase was stable up to 873 K. Special attention has been given to the nature and the crystallographic orientation of the Ni-rich phase obtained at low temperature. It is demonstrated, with in-plane pole figure measurements and simulation, that it was the "-Ni 5 (Ge 0.9 Sn 0.1 ) 3 metastable phase with a hexagonal structure.

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Section: Nature Of the Ni-rich Phasementioning

confidence: 86%

Ni/GeSn solid-state reaction monitored by combined X-ray diffraction analyses: focus on the Ni-rich phase

et al. 2018

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“…However, in ref. , the onset was 300 °C which indicated a temperature offset and placed the in situ experiments on the higher end of the temperatures where Ni 2 In 0.53 Ga 0.47 As phase was observed. (3) The nickelide lattice constants were measured in a region far from the reaction interface (i.e., strain‐free), and the lattice constants were in agreement with those of Ni 2 In 0.53 Ga 0.47 As that were obtained in a prior study on planar structures .…”

Section: Methodsmentioning

confidence: 96%

“…Nickelide Phase Identification : Recent studies on planar nickelide reactions had identified a sequential formation of Ni 3 In 0.53 Ga 0.47 As, Ni 2 In 0.53 Ga 0.47 As, and NiAs with temperatures . Here, the nickelide phase was concluded as Ni 2 In 0.53 Ga 0.47 As due to the following reasons: (1) the study was carried out at temperatures lower than the decomposition temperature of the nickelide phase, and therefore out‐diffusion of In and Ga (which lead to the formation of NiAs phase) was not favoured.…”

Section: Methodsmentioning

confidence: 99%

“…(4) These lattice constants did not fit in the range of values reported in the temperature‐dependent nickelide phases in ref. in which the different surrounding layers (InP substrate and TiN cap layer) might play a role. (5) As shown in Figure b, the nickelide phase had a hexagonal lattice structure with Ni atoms occupying the corner sites (0,0,0) and the edge sites (0,0,1/2).…”

Section: Methodsmentioning

confidence: 99%

“…For these planar device geometries, it was found that at temperatures as low as ≈230 °C, a poly‐crystalline nickelide phase forms and can be thermally stable up to 450 °C . The Ni x In 0.53 Ga 0.47 As lattice is of the NiAs (B8) structure with commonly observed stoichiometry of Ni 2 In 0.53 Ga 0.47 As or Ni 3 In 0.53 Ga 0.47 As at different process conditions. However, the lattice mismatch between In 0.53 Ga 0.47 As and the formed Ni x In 0.53 Ga 0.47 As could introduce large strain in the In 0.53 Ga 0.47 As nanowire channels and leads to the formation of defects at the In 0.53 Ga 0.47 As/Ni x In 0.53 Ga 0.47 As interface, which further complicates detailed structural analysis.…”

Section: Introductionmentioning

confidence: 98%

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Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation

Chen

Dayeh

2017

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The formation of low resistance and self-aligned contacts with thermally stable alloyed phases is a prerequisite for realizing reliable functionality in ultrascaled semiconductor transistors. Detailed structural analysis of the phase transformation accompanying contact alloying can facilitate contact engineering as transistor channels approach a few atoms across. Original in situ heating transmission electron microscopy studies are carried out to record and analyze the atomic scale dynamics of contact alloy formation between Ni and In Ga As nanowire channels. It is observed that the nickelide reacts on the In Ga As (111) || Ni In Ga As (0001) interface with atomic ledge propagation along the Ni In Ga As [101¯0] direction. Ledges nucleate as a train of strained single-bilayers and propagate in-plane as double-bilayers that are associated with a misfit dislocation of b→=2c3[0001]. The atomic structure is reconstructed to explain this phase transformation that involves collective gliding of three Shockley partials in In Ga As lattice to cancel out shear stress and the formation of misfit dislocations to compensate the large lattice mismatch in the newly formed nickelide phase and the In Ga As layers. This work demonstrates the applicability of interfacial disconnection (ledge + dislocation) theory in a nanowire channel during thermally induced phase transformation that is typical in metal/III-V semiconductor reactions.

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