Diamond metal-oxide-semiconductor field-effect transistors (FETs) have been fabricated on IIa-type large-grain diamond substrates with a (110) preferential surface. The drain current and cutoff frequency are −790mA∕mm and 45GHz, respectively, which are higher than those of single-crystal diamond FETs fabricated on (001) homoepitaxial diamond films. The hole carrier density of the hole accumulation layer depends on the orientation of the hydrogen-terminated diamond surface, for which (110) preferentially oriented films show 50%–70% lower sheet resistance than a (001) substrate. We propose that the hole density of the surface accumulation layer is proportional to the C–H bond density on the surface.

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Through the enhancement of hole accumulated density near hydrogen-terminated (111) diamond surfaces, low sheet resistance ($5 k/sq) has been obtained compared with widely used (001) diamond surfaces ($10 k/sq). Using the hole accumulation layer channel, a high drain current density of À850 mA/mm was obtained in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). This drain current density is the highest value for diamond FETs. The high drain current on the (111) surface is attributed to two factors: The low source and drain resistances owing to the high hole carrier density and the high channel mobility at a high gate-source voltage on the (111) surface.

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