High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface

Hirama, Kazuyuki; Tsuge, Kyosuke; Sato, Shoei; Tsuno, Tetsuya; Jingu, Yoshikatsu; Yamauchi, S.; Kawarada, Hiroshi

doi:10.1143/apex.3.044001

Cited by 67 publications

(35 citation statements)

References 14 publications

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“…The difference in the capacitance may be related to the difference in the density of C À -H þ dipoles between the (111) and (100) surfaces. 19) However, a full understanding requires further studies of the surface electronic states for different crystal orientations. For example, an ab initio calculation of the charge density profile will be used to calculate the channel capacitance for each surface orientation.…”

Section: Resultsmentioning

confidence: 99%

“…Metal-semiconductor FETs [14][15][16] and metal-insulator-semiconductor FETs 13,[17][18][19] have been fabricated using hydrogen-terminated diamonds as the channel. The low-temperature operation of such FETs was reported, 20) although they had a two-terminal configuration and the contacts between the diamond and electrodes affected the device performance.…”

Section: Introductionmentioning

confidence: 99%

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Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces

et al. 2013

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The surface conductivity of (111)-and (100)-oriented hydrogen-terminated diamonds was investigated at low temperatures for different carrier densities. The carrier density was controlled in a wide range in an electric doublelayer transistor configuration using ionic liquids. As the carrier density was increased, the temperature dependences of sheet resistance and mobility changed from semiconducting to metallic ones: the sheet resistance and mobility for the (111) surface were nearly independent of temperature for a sheet carrier density of %4 Â 10 13 cm À2 , indicating metallic carrier transport. It was also found that the interface capacitance, determined from the gate voltage dependence of the Hall carrier density, depended significantly on the crystal orientation.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces

et al. 2013

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“…Ranging from surfaceconductive field-effect transistors, 3,4 thermionic emission devices, [5][6][7] to the starting point for many functionalisation experiments leading to novel biosensor concepts. [8][9][10] In many of these situations, the diamond surface is in contact with a fluid.…”

Section: Introductionmentioning

confidence: 99%

Evidence for phase separation of ethanol-water mixtures at the hydrogen terminated nanocrystalline diamond surface

Janssens

Drijkoningen

Saitner

et al. 2012

The Journal of Chemical Physics

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Interactions between ethanol-water mixtures and a hydrophobic hydrogen terminated nanocrystalline diamond surface, are investigated by sessile drop contact angle measurements. The surface free energy of the hydrophobic surface, obtained with pure liquids, differs strongly from values obtained by ethanol-water mixtures. Here, a model which explains this difference is presented. The model suggests that, due to a higher affinity of ethanol for the hydrophobic surface, when compared to water, a phase separation occurs when a mixture of both liquids is in contact with the H-terminated diamond surface. These results are supported by a computational study giving insight in the affinity and related interaction at the liquid-solid interface.

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“…have been studied in order to develop high power and high frequency complementary metal-oxide-semiconductor (CMOS) devices. [1][2][3][4][5][6] Diamond has some excellent intrinsic properties such as a wide band gap energy (5.47 eV), the highest breakdown field (10 MV cm À1 ), large carrier saturation velocity (2.7 Â 10 7 and 1.1 Â 10 7 cm s À1 for electrons and holes, respectively), and the highest carrier mobility (2200 and 1800 cm 2 V À1 Ás À1 for electrons and holes, respectively). [7][8][9] Therefore, many researchers have made great efforts on the fabrication of high-performance diamond-based power devices.…”

mentioning

confidence: 99%

“…16,17 On the other hand, most of diamond-based FETs have been fabricated on hydrogenated-diamond (H-diamond) epilayers. 5,6,14,18 Holes are known to be accumulated on the surface of the Hdiamond with sheet hole density of 10 12 $10 13 cm À2 . 19 In addition, after exposing H-diamond to NO 2 ambient or annealing oxygen-terminated diamond at elevated temperature in mixture ambient of NH 3 and H 2 , the hole density was reported to be reached as high as 1 Â 10 14 cm À2 .…”

mentioning

confidence: 99%

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Liu

Liao

Imura

et al. 2013

Journal of Applied Physics

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Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxidesemiconductor field-effect transistor applications Appl. Phys. Lett. 100, 062905 (2012); 10.1063/1.3684803 Energy-band alignment of Al 2 O 3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4 H -SiC Appl. Phys. Lett. 96, 042903 (2010); 10.1063/1.3291620Band alignments and improved leakage properties of ( La 2 O 3 ) 0.5 ( SiO 2 ) 0.5 / SiO 2 / GaN stacks for hightemperature metal-oxide-semiconductor field-effect transistor applications Impact of a γ -Al 2 O 3 ( 001 ) barrier on LaAlO 3 metal-oxide-semiconductor capacitor electrical propertiesIn order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-diamond), LaAlO 3 films with thin Al 2 O 3 buffer layers are fabricated on the H-diamond epilayers by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques, respectively. Interfacial band configuration and electrical properties of the SD-LaAlO 3 /ALD-Al 2 O 3 /H-diamond metaloxide-semiconductor field effect transistors (MOSFETs) with gate lengths of 10, 20, and 30 lm have been investigated. The valence and conduction band offsets of the SD-LaAlO 3 /ALD-Al 2 O 3 structure are measured by X-ray photoelectron spectroscopy to be 1.1 6 0.2 and 1.6 6 0.2 eV, respectively. The valence band discontinuity between H-diamond and LaAlO 3 is evaluated to be 4.0 6 0.2 eV, showing that the MOS structure acts as the gate which controls a hole carrier density. The leakage current density of the SD-LaAlO 3 /ALD-Al 2 O 3 /H-diamond MOS diode is smaller than 10 À8 A cm À2 at gate bias from À4 to 2 V. The capacitance-voltage curve in the depletion mode shows sharp dependence, small flat band voltage, and small hysteresis shift, which implies low positive and trapped charge densities. The MOSFETs show p-type channel and complete normally off characteristics with threshold voltages changing from À3.6 6 0.1 to À5.0 6 0.1 V dependent on the gate length. The drain current maximum and the extrinsic transconductance of the MOSFET with gate length of 10 lm are À7.5 mA mm À1 and 2.3 6 0.1 mS mm À1 , respectively. The enhancement mode SD-LaAlO 3 /ALD-Al 2 O 3 /H-diamond MOSFET is concluded to be suitable for the applications of high power and high frequency electrical devices. V C 2013 AIP Publishing LLC.

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High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface

Cited by 67 publications

References 14 publications

Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces

Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces

Evidence for phase separation of ethanol-water mixtures at the hydrogen terminated nanocrystalline diamond surface

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

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