A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the substrate. The strength and spatial pattern of the strain can be controlled by the size and separation of the pillars. Application of strain is confirmed by Raman spectroscopy as well as from scanning electron microscopy (SEM) images. From SEM images, the maximum stretch of the graphene film reaches about 20%. This technique can be applied to the formation of band gaps in graphene.Comment: Appl. Phys. Express, in pres

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A new state of matter “quantum valley Hall state” is observed by the nonlocal transport in a massive Dirac fermion.

Graphene has attracted an enormous amount of interest recently because of its unique electronic, optical, mechanical, and other properties. We report a promising method for producing single-layer graphene fully covering an entire substrate at low temperature. Single-layer graphene sheets have been synthesized on a whole 2 cm ×2 cm nickel (Ni) film deposited on a highly oriented pyrolytic graphite (HOPG) substrate by heating the Ni/HOPG in a vacuum. The carbon atoms forming our graphene are diffused from the graphite substrate through the nickel template. Our results demonstrate how to control the amount of carbon atoms for graphene formation to yield graphene films with a fine controlled thickness and crystal structure. Our method represents a significant step toward the scalable synthesis of high-quality graphene films with predefined thickness and toward realizing the unique properties of graphene films.