In order to prepare for the next generation technology manufacturing, ASML and TEL are investigating the process manufacturability performance of the CLEAN TRACK TM LITHIUS Pro™-i/ TWINSCAN™ XT:1900Gi lithocluster at the 45nm node. Previous work from this collaboration showed the feasibility of 45nm processing using the LITHIUS™ i+/TWINSCAN XT:1700i. 1 In this work, process performance with regards to critical dimension uniformity and defectivity are investigated to determine the robustness for manufacturing of the litho cluster. Specifically, at the spinner and PEB plate configuration necessary for the high volume manufacturing requirement of 180 wafers per hour, process data is evaluated to confirm the multi-module flows can achieve the required process performance. Additionally, an improvement in the edge cut strategy necessary to maximize the usable wafer surface without negative impact to defectivity is investigated.
This work is the summary of improvements in processing capability implemented and tested on the LITHIUS Pro TM -i / TWINSCAN TM XT:1950Hi litho cluster installed at ASML's development clean room at Veldhoven, the Netherlands. Process performance with regards to CD uniformity (CDU) and defectivity are investigated to confirm adherence to ITRS roadmaps specifications 1 . Specifically, imaging capabilities are tested for 40nm line 80nm pitch with the new bake plate hardware for below hp 3Xnm generation. For defectivity, the combination of Coater/Developer defect reduction hardware with the novel immersion hood design will be tested.For CDU improvements, the enhanced Post Exposure Bake (PEB) plate hardware was verified versus performance of the previous technology plate. Additionally, after the PEB improvement, a remaining across wafer signature was reduced with an optimized develop process. The total CDU budget was analyzed and compared to previous results. Finally the optimized process was applied to a non top coat resist process. For defectivity improvements, the effectiveness of ASML's new immersion hood and TEL's defect reduction hardware were evaluated. The new immersion hood performance was optimal on very hydrophobic materials, which requires optimization of the track hardware and process. The high contact angle materials could be shown to be successfully processed by using TEL's Advanced Defect Reduction (ADR) for residues related to the high contact angle and optimized bevel cut strategy with new bevel rinse hardware. Finally all the optimized processes were combined to obtain defect counts on a highly hydrophobic resist well within manufacturing specifications.
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