Investigation of processing performance and requirements for next generation lithography cluster tools

Enomoto, Masashi; Shimoaoki, Takeshi; Nafus, Kathleen; Nakashima, Naotoshi; Tsutsumi, Kiyoharu; Marumoto, Hiroshi; Kosugi, Hitoshi; Derwin, P.; Maas, R.; Verspaget, Coen; Mallmann, J.; Vangheluwe, Rik; Lamers, Inge; Heijden, E. van der; Wang, S.

doi:10.1117/12.879380

Cited by 4 publications

(3 citation statements)

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“…As shown in Figure 3 (b), the film density was correlated to the initial formulation wt solid% even though the final film coating thickness were all close to 450 Å. The formulation A1 with the highest initial solid% of 1.11x wt% had the highest film density of 1.28 g/cm 3 while the formulation B3 with the lowest initial solid% of 0.89x wt% had the lowest film density of 1.23 g/cm 3 . Assuming that the chemical compositions are homogeneous across the entire thin film, a higher film density could be resulted from a denser packed of photoresist components, which could potentially impact the lithographic performance.…”

Section: Xrr Analysis On Film Densitymentioning

confidence: 84%

Spin speed impact on photoresist thin film properties and EUV lithographic performance

Cen¹,

Lee

Cui

et al. 2023

Advances in Patterning Materials and Processes XL

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Chemically amplified resist (CAR) materials are widely used in advanced node patterning by extreme ultraviolet lithography (EUVL). To support the continuous requirement of reducing critical dimension (CD), CAR has been designed to process at tens of nanometer coating thickness while taking into consideration film roughness, aspect ratio, and etch transfer challenge. In this study, we investigated the impact of the photoresist’s different spin speed for same film thickness on resolution, line width roughness, and sensitivity (RLS) trade-off for Line and Space (L/S) patterns. We selected photoresists with identical chemical composition that differed only in total wt solid% in the solution. Photoresist films at constant thickness were investigated for the spin speed impacts on photoresist film density, hydrophobicity on the film surface, and film surface roughness. The corresponding EUV lithographic performance will be presented.

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Section: Xrr Analysis On Film Densitymentioning

confidence: 84%

Spin speed impact on photoresist thin film properties and EUV lithographic performance

Cen¹,

Lee

Cui

et al. 2023

Advances in Patterning Materials and Processes XL

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“…It is obvious that controlling the amount and type of contamination is difficult using this approach, but part of the purpose was to assess the capability of a backside brush to remove particles generated on production wafers that will induce focus deviations during lithography. Other studies with more controlled deposition of backside contamination can be found in literature [3]. Those wafers were used as starting material for the evaluation of the backside brush cleaning performance.…”

Section: Backside Cleaning Of Wafers By Brush Scrubber Cleaningmentioning

confidence: 99%

Focus Spot Reduction by Brush Scrubber Cleaning

Pacco¹,

Kesters²,

Simms

et al. 2014

SSP

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of preventive backside cleaning steps. These cleaning steps can be introduced after processes that generated high backside defect counts or right before a lithographic wafer exposure. In this study that was performed at imec’s 300mm cleanroom facility, the study objective was to evaluate the focus spot reduction performance of a stand-alone scrubber in a case study featuring known focus spot generating equipment sets. . In the first part of the study, monitoring of various production tools in terms of backside cross-contamination was done. A set of equipment’s that generated high backside defect counts was selected for generating adequate backside contaminated test material for the cleaning evaluation. This backside contaminated test material was used in our cleaning experiments and evaluation of focus spot reduction by performing leveling tests on an immersion scanner that was able to measure out of plane deviations.

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“…Bubble, antibubble, blister, watermark (W/M), microbridging defect, non-visible, protrusion, blob, print particle, stain defect, dust, line deformation, and water droplet are several immersion lithography defects that have been studied by several authors [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. Out of these experiments, solutions like thicker topcoat, lower PAB, smaller filter pore size, longer developer time, longer rinse time, longer spin dry time, using Nikon Engineering Evaluation Tool (EET), using BF/3D DUV inspection tool, using Dark Field inspection SP2 tool UV laser light, using Defect source analysis (DSA), using Sokudo post developer rinse technique, improving material and rinse composition, using Advance Rinse Process (ADR) rinse process, optimizing rinse cycle time, using filtering system, using "on-the-fly" automatic defect classification (OTF-ADC), using surfactant rinsing, and pumping with filtration stability are all viable solution to further reduce defect at lithography step [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][23][24][25][26][27]…”

Section: Transferable Defectsmentioning

confidence: 99%

Defects reduction at BEOL interconnect within 300mm manufacturing environment

Lee

Wei²,

Kelling

et al. 2012

SPIE Proceedings

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Process yield is a critical factor for a success of 300mm manufacturing. Typically, higher yield corresponds to lower defect counts within the respective processing steps (lithography, etch, plating, and CMP). Within BEOL lithographic processes, there are issues of defects within same lithographic technology and there are concerns of defects between the generation of lithographic technologies, for example, immersion, 193nm "dry", and DUV (248nm). In order to have an effective defect reduction strategy, defects have to be monitored, identified, and analyzed for points of origins. In this paper, we explore three areas of interests in the BEOL: 1) defects occur between different processing steps, specifically, after Immersion Lithography, after Reactive Ion Etch (RIE), and after Chemical Mechanical Polish (CMP), 2) defects after CMP between lithographic technologies (Immersion, Dry, and DUV), and finally 3) defects between different devices. We were able to find evidence of transferable processing defects.

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Investigation of processing performance and requirements for next generation lithography cluster tools

Cited by 4 publications

References 0 publications

Spin speed impact on photoresist thin film properties and EUV lithographic performance

Spin speed impact on photoresist thin film properties and EUV lithographic performance

Focus Spot Reduction by Brush Scrubber Cleaning

Defects reduction at BEOL interconnect within 300mm manufacturing environment

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