The conventional thin film deposition equipment of LPVD has been modified for the preparation of nanometre‐layer stacks of uniform thickness at reduced target/substrate separation. Therefore the planar target was replaced by a cylindrical one and the target motion regime has been modified.During thin film deposition a substrate translation is preferred instead of the usual rotation technique. With this arrangement the emission characteristic of the plasma source can be computer controlled and tailored via a stepper‐motor‐driven manipulator for the desired layer thickness profile across an extended substrate. Thus, for example, a homogeneous film thickness is obtained even for lower target/substrate distances, and an appropriate deposition rate can be maintained.First applications of the equipment are explained and compared with typical results of the conventional technique.
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