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Terbium oxide films are deposited on silicon substrates by metal-organic (MO)CVD from a vapor of Tb(thd) 3 in argon. Terbium sesquioxide (C-form) is realized in this process. Annealing of the films in air at 800°C, followed by cooling in air, leads to the formation of Tb 4 O 7 . The Ar ion-etching of the annealed films causes a reduction of Tb 4þ to Tb 3þ . Optical E g is estimated, photoluminescence spectra are investigated, and refractive indexes and dielectric constants are measured for terbium oxide films before and after annealing in air.

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